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FA1L3ZNECN/a66500avaiMEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD


FA1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "m CHARACTERISTIC SYMBOL . . . TEST CONDITIONS . Collector ..
FA1L3Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "m CHARACTERISTIC SYMBOL . . . TEST CONDITIONS . Collector ..
FA1L3Z-T2B ,Compound transistorFEATURES in millimeters o Resistor Built-in TYPE B C 2.8K0.2 R1 = 4.7 ki2 o. 65ttls _ . R1 E . ..
FA1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS iTa= 25 °c) CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS Collector ..
FA1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS iTa= 25 °c) CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS Collector ..
FA1L4L-T2B ,Compound transistorFEATURES . Resistors Built-in TYPE .__2 ..,_. __.2 Ma PACKAGE DIMENSIONS in millimeters ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description„ Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..


FA1L3Z

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