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FA1L3M-T1B |FA1L3MT1BNECN/a4610avaiCompound transistor
FA1L3M-T2B |FA1L3MT2BNECN/a16020avaiCompound transistor


FA1L3M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) ( Collector Cutoff Current. ICBO VCB = 50 V, IE = o I ..
FA1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FA1L3N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FA1L3N-T2B ,Compound transistorFEATURES in millimeters , 0 Resistors Built-in TYPE _ C 2.8k0.2 V B l RI R2 = 10 ki2 1,- R2 E ..
FA1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "m CHARACTERISTIC SYMBOL . . . TEST CONDITIONS . Collector ..
FA1L3Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "m CHARACTERISTIC SYMBOL . . . TEST CONDITIONS . Collector ..
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FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description„ Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..


FA1L3M-T1B-FA1L3M-T2B

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