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FA1F4ZNECN/a3000avaiMEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD


FA1F4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 0C) 60 50 1 00 200 200 150 _ -55 to +150 TE ..
FA1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C) 60 50 1 00 200 200 150 _ -55 to +150 TE ..
FA1F4Z-T2B ,Compound transistorFEATURES _ in millimeters i,', o Resistor Built-in TYPE 28:02 _ c ttoils i B . l, R1 = 22 kf2 ..
FA1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) ( Collector Cutoff Current. ICBO VCB = 50 V, IE = o I ..
FA1L3M-T1B ,Compound transistorFEATURES 1 in millimeters O Resistors Built-in TYPE 2.8t0.2, . c .65tN , B o .15 ' R1 = 4.7 kg ..
FA1L3M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) ( Collector Cutoff Current. ICBO VCB = 50 V, IE = o I ..
FDS9945_NL ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description„ Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..


FA1F4Z

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