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FA1A4Z-T1B Fast Delivery,Good Price
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FA1A4Z-T1B |FA1A4ZT1BNECN/a18000avaiCompound transistor


FA1A4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c) _ ' CHARACTERISTIC SYMBOL . . . TEST CONDITIONS _ ¢~. _ ..
FA1F4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty CHARACTERISTIC SYMBOL . _ I . . TEST CONDITIONS _ ..
FA1F4M-T1B ,Compound transistorFA1 F4M
FA1F4M-T2B ,Compound transistorFA1 F4M
FA1F4N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °c) l Collector to Base Voltage VCBO 60 Collector to E ..
FA1F4N-T1B ,Compound transistorFEATURES . Resistors Built-in TYPE o Complementary to FN1F4N RI=22ki2 R2 =47 kn ABSOLUTE ..
FDS9936 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures SO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. R = 0.040 Ω @ V = 10 V, ..
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications such as diskused surface mount package.drive motor control, battery powered circuits w ..
FDS9945 ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9945_NL ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..


FA1A4Z-T1B

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