| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F2012 |
TI|Texas Instruments |
N/a |
191 |
 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
F2013 TI, PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2013T TI
F20169AF CSMC
F201G TABI
F2023V1.1 INFINEON
F-202T SEMITEC
F2039 SOLITRON
F205
F2051
F206 FAIRCHIL
F206001TJ
F207 FAIRCHIL, OCXO Surface Mount Package Optional Reflow Process Compatible Optional AT-Cut and SC-Cut Crystal Options Low Profile Compact Package
F20A NS
F20B N/A
F20D N/A
F2012 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F20F60C3M , Power MOSFET
F20W60C3 , Power MOSFET
F20W60C3 , Power MOSFET
F2405D-1W , DUAL/SINGLE OUTPUT DC-DC CONVERTER
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM2509NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
