| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1814D |
TOS|TOSHIBA |
N/a |
50 |
 |
TECHNIK - HIGH RELIABILITY FOR LOW COST |
F1816-80013 HP
F1816-80030
F1840M TOK
F1841SD1200 CRYDOM
F1870-80027 hp
F1877-52010 N/A
F18N10CS
F18N10CS HARRIS
F1-8XT HYPER
F1-8XT
F1-8XT hypersto
F1-8XT HYPERSTONE
F1-8XT HYPERSHONE
F19.660
F191UY 宏齐
F195ECFD3 MOT
F19NF20 ST
F19NM65N ST
F1A3JTP/AJ3 ORIGIN
F1A96007 ORIGIN
F1AA012T-12VDC FT
F1AA012T-12VDC FUJI
F1AA012V-12VDC VDE
F1AA024V FUJITSU
F1-AAG ATHEROS
F1AJ3TP ORIGIN
F1AJ3TP
F1AJ4 ORIGIN
F1B2CAI KEC , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1B2CC KEC , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6324L ,Integrated Load Switchfeatures a small Very small package outline (SC70-6).N-Channel MOSFET (Q1) together with a large P- ..
FDG6331L ,Integrated Load SwitchFeatures This device is particularly suited for compact power • –0.8 A, –8 V. R = 260 mΩ @ V = –4.5 ..
FDG6331L_NL ,Integrated Load SwitchApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
