| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1034 |
TOSHIBA|TOSHIBA |
N/a |
2433 |
 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1034 |
TOS|TOSHIBA |
N/a |
43 |
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
F103602AFNR TI
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F-1065 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F10P20FR , Low Forward Voltage drop Diode
F10P20FR , Low Forward Voltage drop Diode
FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
FDD5670 ,60V N-Channel PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor d ..
FDD5680 ,N-Channel, PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converterDS(on)• Motor ..
