| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1032B |
TOSHIBA|TOSHIBA |
N/a |
1935 |
 |
TECHNIK - HIGH RELIABILITY FOR LOW COST |
F1032U TOS
F1033 ST
F1033 TOS
F1033 ST
F103312FN TI
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F-1065 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDD4685_F085 ,P-Channel PowerTrench?MOSFET -40V, -32A, 35m?Features Typ r = 23mΩ at V = -10V, I = -8.4A InverterDS(on) GS D Typ r = 30mΩ ..
FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
