| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1004 |
|
N/a |
1800 |
 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
F1005-TE16B FUJI
F100B MOT
F1-00FB-0002P
F10100DC FSC
F10-1015-818
F10106DC
F1010E IR
F1010N IR
F1010NL IR
F1010NS IOR
F10125 INDONESIA
F10131DC
F10131DC FSC
F10160DC
F10171DC F
F10176DC
F101B NEC
F101G-89 WJ
F-101T SEMITEC
F102016 NA
F102016
F102052AFN-EL05 TI
F102052AFNR TI
F-102T SEMITEC
F103 NA
F103 NEDI
F10315RN02BE C&K, Miniature ROTA-SLIDE Rotary Switches
F1031N TOS
F1004 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
FDD306P ,-12V P-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionDS(ON) GS Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchild ..
FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDD3570 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable RDS(ON) • High pe ..
