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ESDA6V1S3RL-ESDA6V2S6RL
TRANSIL ARRAY FOR ESD PROTECTION
ESDA6V1S3
ESDA6V2S6TRANSIL ARRAY
FOR ESD PROTECTION
Where transient overvoltage protectionin ESD
sensitive equipmentis required, suchas: COMPUTERS PRINTERS COMMUNICATION SYSTEMS GSM HANDSETS AND ACCESSORIES OTHER TELEPHONE SETS
APPLICATIONSApplication Specific Discretes
A.S.D.™
FUNCTIONAL DIAGRAM
BENEFITSHigh ESD protection level:upto25kV
High integration
Suitablefor high density boards
IEC 1000-4-2: level4
MIL STD 883C-Method 3015-6: class3
(human body model)
COMPLIES WITHTHE FOLLOWINGSTANDARDS: 18 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT:IR max.<2 μA 200W PEAK PULSE POWER (8/20 μs)
FEATURES
DESCRITIONThe ESDA6xxSx is a monolithic voltage
suppressor designedto protect components which
are connectedto data and transmission lines
against ESD. clamps the voltage just above the logic level
supplyfor positive transients, andtoa diode drop
below ground for negative transients.
ESDA6V1S3 / ESDA6V2S6
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
Note1: BetweenanyI/O pinand Ground
Note2: Square pulse, IPP= 25A forESDA6V1S3 andIPP= 15Afor ESDA6V2S6,tp= 2.5μs
Note3: ΔVBR= αT*[Tamb-25]* VBR(25°C)
ESDA6V1S3 / ESDA6V2S6The ESDA family has been designedto clamp fast
spikes like ESD. Generally the PCB designers
needto calculate easily the clamping voltage VCL.
Thisis why we give the dynamic resistancein
additionto the classical parameters. The voltage
across the protection cell can be calculated with
the following formula:
VCL =VBR +RdIPP
Where Ippis thepeak current throughthe ESDA cell.
DYNAMIC RESISTANCE MEASUREMENTThe short durationof the ESD has ledusto prefer more adapted test wave,as below defined,to the
classical 8/20μs and 10/1000μs surges.
2.5μs duration measurement wave. the valueof the dynamic resistance remains
stable fora surge duration lower than 20μs, the
2.5μs rectangular surge is well adapted. In
addition both rise and fall times are optimizedto
avoid any parasitic phenomenon during the
measurementof Rd.
CALCULATION OF THE CLAMPING VOLTAGE
USE OF THE DYNAMIC RESISTANCE
ESDA6V1S3 / ESDA6V2S6110 10010
Ppp(W)
Fig.2: Peak pulse power versus exponential
pulse duration(Tj initial=25 °C). 25 50 75 100 125 1500.0
Ppp[Tj initial]/Pp[Tj initial=25°C]
Fig.1: Peak power dissipation versus initial
junction temperature. 5 1010
C(pF)
Fig.4 : Capacitance versus reverse applied
voltage (typical values).68 1012141618 202224262830320.1
Ipp(A)
Fig.3: Clamping voltage versus peak pulse
current(Tj initial=25 °C).
Rectangular waveformtp= 2.5 μs.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50.01
5.00 (A)FM
6: Peak forward voltage drop versus peak current (typical values). 50 75 100 1251
200 [Tj]/I [Tj=25°C]RR
Fig.5: Relative variationof leakage current
versus junction temperature (typical values).
ESDA6V1S3 / ESDA6V2S6
APPLICATION EXAMPLE:- Protectionof logic-level signals.(ex: centronics junction)
- Protectionof symmetrical signals.
Note: Capacitance value between any I/O pin and
Groundis dividedby2.
Implementing its ASDTM technology,
STMicroelectronics has developeda monolithic
TRANSIL diode array, which is a reliable
protection against electrostatic overloads for
computer I/O ports, modems, GSM handsets and
accessoriesor other similar systems with data
outputs. The ESDAxxSx integrates 18 TRANSIL
diodesina compact package that can be easily
mounted closeto the circuitryto be protected,
eliminating the assembly costs associated with the
useof discrete diodes, and also increasing system
reliability.
Each TRANSIL hasa breakdown voltage between
6.2V (minimum) and 7.2V (maximum). When the
input voltageis lower than the breakdown voltage,
the diodes presenta high impedanceto ground.
For short overvoltage pulses, the fast-acting
diodes providean almost instantaneous response,
clamping the voltagetoa safe level.
ESDA6V1S3 / ESDA6V2S6
Packaging: Preferred packagingis tape and reel.
MARKING: Logo, date code
PACKAGE MECHANICAL DATASO-20 (Plastic)
ORDER CODE
Weight: 0.55g.
