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DF3A5.6LFV |DF3A56LFVTOSHIBAN/a32000avaiESD protection diode (low capacitance type)


DF3A5.6LFV ,ESD protection diode (low capacitance type)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitZener ..
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DF3A5.6LFV
ESD protection diode (low capacitance type)
DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD
DF3A5.6LFV

Product for Use Only as Protection against Electrostatic
Discharge (ESD) This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application. • The mounting of two devices in an ultra-compact package enables a reduction in the number of parts and in the mounting cost. Low terminal capacitance: CT = 8.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)

Unit: mm
Weight: 1.5 mg (typ.)
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