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| Home › C > C1 > 10pcs of CY6264-70SNI,mfg:CY,Memory : MicroPower SRAMs |
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| CY6264-70SNI from CY, Cypress 10pcs , SOP , Alternate PN:CY626470SNI,Memory : MicroPower SRAMs | ||||||||||
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| CY6264-70SNI from CRY, 4pcs , SOP , Alternate PN:CY626470SNI,Memory : MicroPower SRAMs | ||||||||||
Block Diagram Pin ConfigurationSOICTop ViewNC VCC1 28A WE42 27A CE5 3 26 2A AI/O 6 4 25 30A A7 5 24 2INPUT BUFFERA A8 16 23I/O1A OE97 22A A10 08 21A CE11 19 20AI/O12A I/O12 710 19A2I/O I/O0 611 18A3 I/O I/O I/O3 1 512 17A I/O I/O4 256 x 32 x 8 2 413 16GND I/OARRA Y 3A 14 155I/O4A6 CY6264-2A7I/O5A8I/O6POWERCE1I/ODOWN7CE COLUMN DECODER2WEOECY6264-1Selection GuideCY6264-55 CY6264-70Maximum Access Time (ns) 55 70Maximum Operating Current (mA) 100 100Maximum Standby Current (mA) 20/15 20/15Shaded area contains advanced information.Cypress Semiconductor Corporation • • San Jose • • October 1994 – Revised June 1996 PRELIMINARYCY6264Output Current into Outputs (LOW).. 20 mAMaximum RatingsStatic Discharge Voltage ...... >2001V(Above which the useful life may be impaired. For user guide-(per MIL-STD-883, Method 3015)lines, not tested.)Latch-Up Current....... >200 mAStorage Temperature ...... –65°C to +150°CAmbient Temperature withOperating RangePower Applied –55°C to +125°CAmbientSupply Voltage to Ground Potential...... –0.5V to +7.0VRange Temperature VCCDC Voltage Applied to Outputs[1]Commercial0°C to +70°C 5V ± 10%in High Z State ........ –0.5V to +7.0V[1]DC Input Voltage ..... –0.5V to +7.0VElectrical Functional Description2HIGH. Under these conditions, the contents of the location ad-The CY6264 is a high-performance CMOS static RAM orga- dressed by the information on address pins is present on thenized as 8192 words by 8 bits. Easy memory expansion is eight data input/output pins.provided by an active LOW chip enable (CE ), an active HIGH1The input/output pins remain in a high-impedance state unlesschip enable (CE ), and active LOW output enable (OE) and2the chip is selected, outputs are enabled, and write enablethree-state drivers. Both devices have an automatic pow-(WE) is HIGH. A die coat is used to insure alpha immunity.er-down feature (CE ), reducing the power consumption by1Logic | ||||||||||
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| CY6264-70SNS CY | ||||||||||
| CY6264-70SNI ,Memory : MicroPower SRAMsFunctional Description2HIGH. Under these conditions, the contents of the location ad-The CY6264 is .. CY6264-70SNXC ,8 K ?8 Static RAMFunctional Description Temperature ranges: The CY6264 is a high-performance CMOS static RAM organiz .. CY74FCT138ATQC ,1-of-8 DecoderCharacteristics Over the Operating Range[5]Parameter Description Test Conditions Min. Typ. Max. Uni .. CY74FCT138ATQCT ,1-of-8 Decodermaximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage ra .. CY74FCT138ATSOC ,1-of-8 Decodermaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti .. D1861 , D1861A 10 Gbits/s 1310 nm DML Module D1899 , TO-252 Plastic-Encapsulated Transistors D1990 , SERIAL I/O CALENDAR & CLOCK CMOS LSI |
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