Partno |
Mfg |
Dc |
Qty |
Available | Descript |
CXK1012 |
SONY |
N/a |
988 |
|
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY |
CXK1013 SONY
CXK1013P SONY
CXK1023P SONY
CXK1012 , 1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
CXK1024P , MNOS 2K (256 X 8)-BIT NON-VOLATILE MEMORY
CXK581000AM-10LL , 131072-word x 8-bit High Speed CMOS Static RAM
CXK581000AM-10LL , 131072-word x 8-bit High Speed CMOS Static RAM
CXK581000AM-10LL , 131072-word x 8-bit High Speed CMOS Static RAM
CY7C15632KV18-450BZXC ,72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)Features Configurations Separate Independent Read and Write Data Ports With Read Cycle Latency of 2 ..
CY7C15632KV18-450BZXI ,72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)Characteristics . 21Valid Data Indicator (QVLD) ....7 Capacitance .....21PLL ......7 Thermal Resist ..
CY7C15632KV18-500BZXI ,72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)Functional Description Four-word Burst for Reducing Address Bus Frequency The CY7C15632KV18 is a 1. ..