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CUS10I30ATOSHIBAN/a24000avaiSchottky barrier diode


CUS10I30A ,Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
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CUS10I30A
Schottky barrier diode
CUS10I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS10I30A

Secondary Rectification in Switching Regulators
Reverse-Current Protection in Mobile Devices Forward voltage: VFM = 0.39 V (max) @ IFM = 0.7 A Forward current (AV): IF (AV) = 1.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for high-density board assembly due to the use of a small
surface-mount package, “US-FLATTM”
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ta = 44°C: Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Soldering size: 6 mm × 6 mm Board thickness: 1.6 mm
Rectangular waveform (α = 180°), VR = 15 V
Unit: mm
Weight: 0.004 g (typ.)
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