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CFH120-08 from SM, 14000pcs , SOT143 , Alternate PN:CFH12008,Preliminary Datasheet
Partno Mfg Dc Qty Available
CFH120-08 SM N/a 14000
CFH120-08 from 西门子, 2950pcs , SOT143+ , Alternate PN:CFH12008,Preliminary Datasheet
CFH120-08 2950pcs , 10 , Alternate PN:CFH12008,Preliminary Datasheet

Characteristics Symbol Max. Value UnitDrain-source voltage V 3.0 VDSDrain-gate voltage V 4.0 VDGGate-source voltage V -2.0 VGSDrain current I 40 mADTChannel temperature 150 °CChTopOperating temperature -30 ... +85 °CTStorage temperature range -65 ... +150 °Cstg)Total power dissipation (T < 51°C) 1 P 180 mWStotThermal resistanceChannel-soldering point source R 690 K/WthChS1) T : Temperature measured at soldering pointSInfineon Technologies AG page 1/20 Wireless SolutionsthRev. 3.0/January 11 , 2002 WS TI DS 12GaAs HEMT CFH120________________________________________________________________________________________________________Electrical GaAs HEMT CFH120________________________________________________________________________________________________________Preliminary DatasheetFeatures· low noise pseudomorphic HEMTwith high associated gain· low cost plastic package· for low noise front end amplifiersup to 20 GHz· For DBS down converters· Fully RF tested at 12 GHz1 = source2 = drain3 = sourceESD: Electrostatic discharge sensitive device,4 = gateobserve handling precautions!Type Marking Ordering Code (taped) PackageCFH120-06 H5s Q62705-K0671 MW-4CFH120-08 H3s Q62705-K0603 MW-4CFH120-10 H4s Q62705-K0604 MW-4Maximum Ratings
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