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BYV42EB-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA• Low forward volt drop VR = 150 V/ 200 V
• Fast switching • Soft recovery characteristic VF ≤ 0.85 V
• Reverse surge capability
• High thermal cycling performance IO(AV) = 30 A• Low thermal resistance
IRRM = 0.2 Arr ≤ 28 ns
GENERAL DESCRIPTIONDual, ultra-fast, epitaxial rectifier diodes intendedfor useas output rectifiersin high frequency switched mode power
supplies.
The BYV42E seriesis suppliedin the SOT78 conventional leaded package.
The BYV42EB seriesis suppliedin the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
PIN DESCRIPTION anode 1 (a) cathode (k)
1 anode 2 (a)
tab cathode (k)
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV42E / BYV42EB -150 -200VRRM Peak repetitive reverse voltage - 150 200 V
VRWM Crest working reverse voltage - 150 200 V Continuous reverse voltage Tmb ≤ 144˚C - 150 200 V
IO(AV) Average rectified output current square wave - 30 A
(both diodes conducting) δ = 0.5; Tmb ≤ 108 ˚C
IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 30 A
per diode Tmb ≤ 108 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
VRWM(max)
IRRM Repetitive peak reverse current tp = 2 μs; δ = 0.001 - 0.2 A
per diode
IRSM Non-repetitive peak reverse tp = 100 μs - 0.2 A
current per diode
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mountingtab.
tab3
tab
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes - - 1.4 K/W
Rth j-a Thermal resistance junction to SOT78 package, in free air - 60 - K/W
ambient SOT404 and SOT428 packages, - 50 - K/W
pcb mounted, minimum footprint,
FR4 board
ELECTRICAL CHARACTERISTICScharacteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 15 A; Tj = 150˚C - 0.78 0.85 V
IF = 15 A - 0.95 1.05 VIF = 30 A - 1.00 1.20 V Reverse current VR = VRWM; Tj = 100 ˚C - 0.5 1 mA
VR = VRWM - 10 100 μAQs Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF /dt = 20 A/μs- 6 15 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 28 ns
-dIF/dt = 100 A/μstrr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 13 22 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV)) perRFR
0.5A
time
timeFF 5 10 15 20 250
IF(AV) / A
PF / W
Tmb(max) / C
shunt
Current
D.U.T.
Voltage Pulse Source 5 10 150
IF(AV) / A
PF / W Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
trr / ns
dIF/dt (A/us)
Qs / nC
Irrm / A 10 100-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W) VF / V
50
40
30
20
10
0.5 1.51.0
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONSDimensions in mm
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes1. Epoxy meets UL94 V0 at 1/8".
4.5 max
10.3 max
3.8
