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BYV29FX-600
Enhanced ultrafast power diode
Product profile1.1 General descriptionEnhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits High thermal cycling performance Isolated package Low on-state losses Low thermal resistance Soft recovery characteristic
1.3 Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
BYV29FX-600
Enhanced ultrafast power diode
Rev. 5 — 16 April 2012 Product data sheet
Table 1. Quick reference dataVRRM repetitive peak reverse voltage - - 600 V
IF(AV) average forward current square-wave pulse; δ =0.5; ≤72 °C; see Figure 1; see Figure 2
--9 A
Static characteristics forward voltage IF =8A; Tj=25 °C; see Figure 5 - 1.45 1.9 V =8A; Tj =150 °C; see Figure 5 - 1.25 1.7 V
NXP Semiconductors BYV29FX-600
Enhanced ultrafast power diode Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationBYV29FX-600 TO-220F plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 "full pack"
SOD113
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage DC - 600 V
IF(AV) average forward current square-wave pulse; δ =0.5 ; Th≤72 °C;
see Figure 1; see Figure 2 A
IFRM repetitive peak forward current square-wave pulse; δ =0.5; tp=25 µs; ≤72°C
-18 A
IFSM non-repetitive peak forward current sine-wave pulse; tp=10 ms;
Tj(init) =25 °C; see Figure 3
-91 A
sine-wave pulse; tp= 8.3 ms;
Tj(init) =25 °C; see Figure 3 100 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
NXP Semiconductors BYV29FX-600
Enhanced ultrafast power diode
NXP Semiconductors BYV29FX-600
Enhanced ultrafast power diode Thermal characteristics Isolation characteristics
Table 5. Thermal characteristicsRth(j-h) thermal resistance from
junction to heatsink
with heatsink compound ; see Figure 4 --5.5 K/W
Rth(j-a) thermal resistance from
junction to ambient free air
-55 -K/W
Table 6. Isolation characteristicsVisol(RMS) RMS isolation voltage 50Hz≤f≤60 Hz; RH≤65 %; from all pins to
external heatsink; sinusoidal waveform; clean
and dust free - 2500 V
Cisol isolation capacitance f = 1 MHz ; from cathode to external heatsink - 10 - pF
NXP Semiconductors BYV29FX-600
Enhanced ultrafast power diode Characteristics
Table 7. Characteristics
Static characteristics forward voltage IF =8A; Tj =25°C; see Figure 5 - 1.45 1.9 V =8A; Tj= 150 °C; see Figure 5 - 1.25 1.7 V reverse current VR =600 V; Tj=25°C --50 µA =600 V; Tj= 100°C --1.5 mA
Dynamic characteristics recovered charge IF =1A; VR =30 V; dIF/dt= 100 A/s; =25 °C; see Figure 6
-13 -nC
trr reverse recovery time - 17.5 35 ns
IRM peak reverse recovery current - 1.5 - A
VFRM forward recovery voltage IF =1A; dIF/dt= 100 A/s; Tj =25°C;
see Figure 7
-3.2 -V
NXP Semiconductors BYV29FX-600
Enhanced ultrafast power diode
