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BYV26E-TAP from VISHAY

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BYV26E-TAP

Manufacturer: VISHAY

Ultra-Fast Avalanche Sinterglass Diode

Partnumber Manufacturer Quantity Availability
BYV26E-TAP,BYV26ETAP VISHAY 55000 In Stock

Description and Introduction

Ultra-Fast Avalanche Sinterglass Diode The BYV26E-TAP is a high-efficiency rectifier diode manufactured by Vishay. Here are its key specifications:

- **Manufacturer**: Vishay
- **Part Number**: BYV26E-TAP
- **Type**: Ultrafast Rectifier Diode
- **Maximum Repetitive Reverse Voltage (VRRM)**: 200 V
- **Average Forward Current (IF(AV))**: 2 A
- **Peak Forward Surge Current (IFSM)**: 50 A (non-repetitive)
- **Forward Voltage Drop (VF)**: 0.95 V (at 2 A)
- **Reverse Recovery Time (trr)**: 35 ns (typical)
- **Junction Temperature (TJ)**: -65°C to +150°C
- **Package**: DO-204AL (DO-41)
- **Mounting Type**: Through Hole
- **Applications**: High-frequency rectification, freewheeling diodes, and snubber circuits.

This information is based on Vishay's datasheet for the BYV26E-TAP.

Partnumber Manufacturer Quantity Availability
BYV26E-TAP,BYV26ETAP VIS 98600 In Stock

Description and Introduction

Ultra-Fast Avalanche Sinterglass Diode The BYV26E-TAP is a fast switching diode manufactured by VIS (Vishay Intertechnology). Here are the key specifications from Ic-phoenix technical data files:

- **Manufacturer**: VIS (Vishay Intertechnology)  
- **Type**: Fast switching diode  
- **Package**: TAP (DO-214AC, SMB)  
- **Peak Repetitive Reverse Voltage (VRRM)**: 200 V  
- **Average Rectified Forward Current (IF(AV))**: 2 A  
- **Non-Repetitive Peak Forward Surge Current (IFSM)**: 50 A (8.3 ms single half-sine-wave)  
- **Forward Voltage (VF)**: 0.95 V (at 2 A)  
- **Reverse Recovery Time (trr)**: 35 ns (typical)  
- **Operating Junction Temperature (Tj)**: -65 °C to +175 °C  
- **Storage Temperature Range (Tstg)**: -65 °C to +175 °C  

This information is based on the manufacturer's datasheet for the BYV26E-TAP diode.

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