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BYT230PIV400-BYT230PIV-400-BYT231PIV400
FAST RECOVERY RECTIFIER DIODES
BYT230PIV-400
BYT231PIV-400May 2000- Ed:5D
FAST RECOVERY RECTIFIER DIODES
These rectifier devices are suitedfor free-wheeling
functionin converters and motor control circuits.
Packagedin ISOTOP, they are intended for usein
Switch Mode Power Supplies.
DESCRIPTION VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance=45pF
Inductance<5 nH
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
TM: ISOTOP isaregistered trademark ofSTMicroelectronics.
BYT230PIV-400 / BYT231PIV-400Pulse test:*tp= 380μs,δ <2%tp=5 ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously:Δ Tj(diode1)= P(diode)x Rth(j-c) (Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES evaluate the conduction losses use the following equation:
P=1.1xIF(AV)+ 0.0095IF2 (RMS)
RECOVERY CHARACTERISTICS
TURN-OFF SWITCHING CHARACTERISTICS
BYT230PIV-400 / BYT231PIV-4000.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak current versus form factor (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig.3: Average forward current versus ambient
temperature (δ=0.5, per diode).
1E-3 1E-2 1E-1 1E+040
IM(A)
Fig.4: Non repetitive surge peak forward current
versus overload duration (per diode). 5 10 15 20 25 30 35 400
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode).
0.0 0.5 1.0 1.5 2.0 2.50.1
IFM(A)
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig.5: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode).
BYT230PIV-400 / BYT231PIV-400 10 100 20020
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode). 20 50 100 200 50010
Qrr(nC)
Fig. 8: Recovery charges versus dIF/dt (per
diode). 100 200 300 400 5000
VFP(V)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode). 20 50 100 200 5001
IRM(A)
Fig.9: Recovery current versus dIF/dt (per diode). 25 50 75 100 125 1500.25
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
Fig. 12: Dynamic parameters versus junction
temperature. 100 200 300 400 5000.00
tfr(μs)
Fig. 11: Forward recovery time versus dIF/dt (per
diode).
BYT230PIV-400 / BYT231PIV-400
Fig. 13: Turn-off switching characteristics (without
serie inductance).
Fig. 14: Turn-off switching characteristics (with
serie inductance).
