BYQ28X-200 ,Dual ultrafast power diode
BYQ28X-200 ,Dual ultrafast power diodeFeatures and benefits Fast switching Low on-state losses Guaranteed ESD capability Soft recover ..
BYQ28X-200 ,Dual ultrafast power diode
BYQ28X-200 ,Dual ultrafast power diode
BYQ28X-200 ,Dual ultrafast power diodeApplications Output rectifiers in high-frequency switched-mode power supplies1.4 Quick reference d ..
BYQ28X-200. ,Dual ultrafast power diodeBYQ28X-200Dual ultrafast rugged rectifier diodeRev. 02 — 5 February 2009 Product data sheet1. Produ ..
C4159 , Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
C4408 , 2C 22 SOLID BC PVC NS PVC Sound, Alarm & Security Cable
C4500 , OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options
C4532X7R1H685M , Commercial Grade ( General (Up to 50V) )
C4532X7R2A225M , LM3402/LM3402HV 0.5A Constant Current Buck Regulator for Driving High Power LEDs
C4545 , Circuit Protection Solutions Low Voltage Fuse Links Catalogue
BYQ28X200-BYQ28X-200-BYQ28X-200.
Dual ultrafast power diode
BYQ28X-200
Dual ultrafast rugged rectifier diode
Rev. 02 — 5 February 2009 Product data sheet Product profile
1.1 General descriptionDual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package.
1.2 Features and benefits Fast switching Guaranteed ESD capability High thermal cycling performance Low on-state losses Soft recovery minimizes
power-consuming oscillations
1.3 Applications Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data Table 1. Quick referenceVRRM repetitive peak
reverse voltage - 200 V
IO(AV) average output
current
SQW; δ =0.5; Th≤92 °C;
both diodes conducting; see
Figure 1; see Figure 2
--10 A
IFRM repetitive peak
forward current
SQW; δ =0.5; tp =25µs; ≤92 °C; per diode
--10 A
Dynamic characteristicstrr reverse recovery
time =1A; VR =30V;
dIF/dt= 100 A/µs; =25 °C; ramp recovery;
see Figure 5 1525ns
Static characteristics forward voltage IF =5A; Tj =150 °C; see
Figure 4 0.8 0.895V
Electrostatic dischargeVESD electrostatic
discharge voltage
HBM; C= 250 pF;
R=1.5kΩ; all pins
--8 kV
NXP Semiconductors BYQ28X-200
Dual ultrafast rugged rectifier diode Pinning information Ordering information
Table 2. Pinning information A1 anode 1
SOT186A
(TO-220F) K cathode A2 anode 2 n.c. mounting base; isolated21
sym125A1
Table 3. Ordering informationBYQ28X-200 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 3-lead TO-220 "full pack"
SOT186A
NXP Semiconductors BYQ28X-200
Dual ultrafast rugged rectifier diode Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse
voltage
-200 V
VRWM crest working reverse
voltage
-200 V reverse voltage DC - 200 V
IO(AV) average output current SQW; δ= 0.5; Th≤92 °C; both diodes conducting;
see Figure 1; see Figure 2
-10 A
IFRM repetitive peak forward
current
SQW; δ= 0.5; tp=25 µs; Th≤92 °C; per diode - 10 A
IFSM non-repetitive peak
forward current=10 ms; SIN; Tj(init)=25 °C; per diode - 50 A= 8.3 ms; SIN; Tj(init)=25 °C; per diode - 55 A
IRRM repetitive peak reverse
current =2µs; δ= 0.001 - 0.2 A
IRSM non-repetitive peak
reverse current= 100µs - 0.2 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
Electrostatic dischargeVESD electrostatic discharge
voltage
HBM; C= 250 pF; R= 1.5 kΩ; all pins - 8 kV
NXP Semiconductors BYQ28X-200
Dual ultrafast rugged rectifier diode Thermal characteristics Isolation characteristics
Table 5. Thermal characteristicsRth(j-h) thermal resistance from
junction to heatsink
with heatsink compound; see Figure 3 --5.7 K/W
Rth(j-a) thermal resistance from
junction to ambient free
air
-55 - K/W
Table 6. Isolation characteristicsVisol(RMS) RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal waveform;
relative humidity < 65 %; clean and dust
free; from all terminals to external heatsink
--2500 V
Cisol isolation capacitance from cathode to external heatsink;
f=1MHz
-10 - pF
NXP Semiconductors BYQ28X-200
Dual ultrafast rugged rectifier diode Characteristics
Table 7. Characteristics
Static characteristics forward voltage IF =10A; Tj =25°C - 1.1 1.25 V =5A; Tj= 150 °C; see Figure 4 - 0.8 0.895 V =5A; Tj=25°C - 0.95 1.1 V reverse current VR =200 V; Tj =25°C - 2 10 µA =200 V; Tj= 100°C - 0.1 0.2 mA
Dynamic characteristics recovered charge IF =2A; VR =30 V; dIF/dt=20 A/µs; =25°C 9 µC
trr reverse recovery time IF =1A; VR =30 V; dIF/dt= 100 A/µs;
ramp recovery; Tj=25 °C; see Figure 5
-15 25 ns= 0.5 A; IR=1 A; step recovery;
measured at IR = 0.25 A; Tj =25°C; see
Figure 6
--20 ns
IRM peak reverse recovery
current =5A; VR≥30 V; dIF/dt=50 A/µs; =25°C; see Figure 5
-0.5 0.7 A
VFRM peak forward recovery
voltage =1A; dIF/dt=10 A/µs; Tj=25 °C; see
Figure 7 - V
NXP Semiconductors BYQ28X-200
Dual ultrafast rugged rectifier diode
