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BYC8X-600 |BYC8X600PHN/a100avaiHyperfast power diode
BYC8X-600. |BYC8X600NXPN/a100avaiHyperfast power diode
BYC8X-600.. |BYC8X600NXPN/a100avaiHyperfast power diode


BYC8X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC8X-600. ,Hyperfast power diodeApplications„ Continuous Current Mode (CCM) „ Half-bridge/full-bridge switched-mode Power Factor Co ..
BYC8X-600.. ,Hyperfast power diodeBYC8X-600Hyperfast rectifier diode, low switching lossRev. 02 — 13 March 2009 Product data sheet1. ..
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BYC8X-600-BYC8X-600.-BYC8X-600..
Hyperfast power diode
BYC8X-600
Hyperfast rectifier diode, low switching loss
Rev. 02 — 13 March 2009 Product data sheet Product profile
1.1 General description

Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
Low reverse recovery current and low
thermal resistance Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode
power supplies Half-bridge lighting ballasts
1.4 Quick reference data
Table 1. Quick reference
VRRM repetitive peak
reverse voltage - 600 V
IF(AV) average forward
current
square-wave pulse; δ= 0.5; =59°C; see Figure 1;
see Figure 2
--8 A
Dynamic characteristics

trr reverse recovery
time =8A; VR =400V;
dIF/dt= 500 A/µs; =25 °C; see Figure 5
-19 - ns
Static characteristics
forward voltage IF =8A; Tj =150 °C; see
Figure 4 1.4 1.85 V
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Pinning information
Ordering information Limiting values
Table 2. Pinning information
K cathode
SOD113
(TO-220F)
A anode n.c. mounting base; isolated1
Table 3. Ordering information

BYC8X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
SOD113
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse
voltage
-600 V
VRWM crest working reverse
voltage
-600 V
IF(AV) average forward
current
square-wave pulse; δ =0.5; Th=59 °C; see Figure
1; see Figure 2 A
IFRM repetitive peak forward
current
square-wave pulse; δ= 0.5; tp=25 µs; Th =59°C - 16 A
IFSM non-repetitive peak
forward current=10 ms; sine-wave pulse; Tj(init) =25°C - 80 A= 8.3 ms; sine-wave pulse; Tj(init) =25°C - 88 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Thermal characteristics

Table 5. Thermal characteristics

Rth(j-h) thermal resistance from
junction to heatsink
with heatsink compound; see Figure 3 --4.8 K/W
Rth(j-a) thermal resistance from
junction to ambient free
air
-55 - K/W
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Isolation characteristics
Characteristics
Table 6. Isolation characteristics

Visol(RMS) RMS isolation voltage f=1 MHz; RH=65 %; between all pins
and external heatsink
--2500 V
Cisol isolation capacitance from cathode to external heatsink - 10 - pF
Table 7. Characteristics
Static characteristics
forward voltage IF =8A; Tj= 150 °C; see Figure 4 - 1.4 1.85 V =8A; Tj =25°C - 2 2.9 V =16A; Tj= 150°C - 1.7 2.3 V reverse current VR =500 V; Tj= 100°C - 1.1 3 mA= 600V - 9 150 µA
Dynamic characteristics
recovered charge IF =1A; dIF/dt= 100 A/µs - 12 - nC
trr reverse recovery time IF =8A; VR= 400 V; dIF/dt= 500 A/µs; = 100°C
-32 40 ns =1A; VR =30 V; dIF/dt=50 A/µs; =25°C
-30 52 ns =8A; VR= 400 V; dIF/dt= 500 A/µs; =25°C; see Figure 5
-19 - ns
IRM peak reverse recovery
current =10A; VR= 400 V; dIF/dt= 500 A/µs; = 100°C
-9.5 12 A =8A; VR= 400 V; dIF/dt=50 A/µs; = 125°C
-1.5 5.5 A
VFR forward recovery
voltage =10A; dIF/dt= 100 A/µs; Tj =25°C;
see Figure 6 10 V
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Package outline

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