BYC5X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC8-600 ,Rectifier diode ultrafast, low switching lossLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC8B-600 ,Hyperfast power diode
BYC8B-600 ,Hyperfast power diode
BYC8B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC8X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
BYC5X-600
Hyperfast power diode
Product profile1.1 General descriptionHyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYC5X-600
Rectifier diode hyperfast
Rev. 01 — 3 September 2007 Product data sheet Extremely fast switching n Low thermal resistance Low reverse recovery current n Isolated package Reduces switching loss in associated
MOSFET Half-bridgeor full-bridge switched-mode
power supplies Continuous Current Mode (CCM) Power
Factor Correction (PFC) Half-bridge lighting ballasts VRRM≤ 600V n IF(AV)≤ 5A VF= 1.40 V (typ) n trr=19 ns (typ)
Table 1. Pinning cathode (k)
SOD113 (2-lead TO-220F) anode (a) mounting base; isolated1 a
001aaa020
NXP Semiconductors BYC5X-600
Rectifier diode hyperfast Ordering information Limiting values
Table 2. Ordering informationBYC5X-600 TO-220F plastic single-ended package; isolated heatsink mounted;1 mounting hole;
2-lead TO-220 ‘full pack’
SOD113
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Th≤ 100°C - 500 V
IF(AV) average forward current square waveform;δ= 0.5; Th≤87 °C- 5 A
IFRM repetitive peak forward current square waveform;δ= 0.5; Th≤87°C - 10 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform - 40 A= 8.3 ms; sinusoidal waveform - 44 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYC5X-600
Rectifier diode hyperfast Thermal characteristics Isolation characteristics
Table 4. Thermal characteristicsRth(j-h) thermal resistance from junction to heatsink with heatsink compound;
see Figure1 - 5.5 K/W
without heatsink compound - - 7.2 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W
Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;=50 Hz to 60 Hz; sinusoidal waveform;
relative humidity≤65 %; clean and dust free - 2500 V
Cisol isolation capacitance from cathode to external heatsink; f=1 MHz - 10 - pF
NXP Semiconductors BYC5X-600
Rectifier diode hyperfast Characteristics
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=5 A; Tj= 150 °C; see Figure2 - 1.40 1.75 V=10 A; Tj= 150 °C; see Figure2 - 1.75 2.20 V=5 A; see Figure2 - 2.00 2.90 V reverse current VR= 600V - 9 100 μA= 500 V; Tj= 100°C - 0.9 3.0 mA
Dynamic characteristicstrr reverse recovery time IF =1AtoVR =30V; dIF/dt=50A/μs;
see Figure3 3050ns=5 A to VR= 400V;
dIF/dt= 500 A/μs; see Figure3
-19 - ns=5 A to VR= 400V;
dIF/dt= 500 A/μs; Tj= 100 °C;
see Figure3 2530ns
IRM peak reverse recovery
current=5 A to VR= 400V;
dIF/dt=50A/μs; Tj= 125 °C;
see Figure3 0.7 3 A=5 A to VR= 400V;
dIF/dt= 500 A/μs; Tj= 100 °C;
see Figure3 8 11 A
VFR forward recovery
voltage=10 A; dIF/dt= 100 A/μs;
see Figure4 9 11 V
NXP Semiconductors BYC5X-600
Rectifier diode hyperfast
NXP Semiconductors BYC5X-600
Rectifier diode hyperfast
