| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BUZ81 |
西门子 |
N/a |
49 |
 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
BUZ81 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ90A ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max.
BUZ90A. ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
C30T04QH-11A , Schottky Barrier Diode
