BUZ50A ,N-Channel SIPMOS Power TransistorBUZ 50 A® SIPMOS Power Transistor• N channel• Enhancement modePin 1 Pin 2 Pin 3G D SType V I R Pack ..
BUZ50A ,N-Channel SIPMOS Power TransistorCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ50A ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 1000 - -GS ..
BUZ50B ,N-Channel SIPMOS Power TransistorBUZ 50 B® SIPMOS Power Transistor• N channel• Enhancement modePin 1 Pin 2 Pin 3G D SType V I R Pack ..
BUZ60 ,SIPMOS Power Transistortll - - 7777770.-_7.;7,77 '-, --, -
65D I), II 6235505 0030550 ll IISIEG
88D 14684 D 7.3443
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BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
BUZ50A
N-Channel SIPMOS Power Transistor
BUZ 50 A
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
Maximum Ratings
BUZ 50 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 50 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 50 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 50 A
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120°C160C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.6 D
Power dissipation tot = ƒ(TC)20406080100120°C160C
10
20
30
40
50
60
80 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-2 10
-1 10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 50 A
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs1020304050V65DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS
0.01.02.03.04.0A5.5D
10
12
16 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
0.0
0.5
1.0
1.5
2.0
3.0 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.0
0.5
1.0
2.0 fs
