BUZ104L ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)BUZ 104L® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Level• dv/dt ..
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BUZ104L
N-Channel SIPMOS Power Transistor
BUZ 104L
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
Maximum Ratings
BUZ 104L
Maximum Ratings
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 104L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 104L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 104L
Drain current D = ƒ(TC)
parameter: VGS ≥ 5 V20406080100120140°C180C
10
12
14
18 D
Power dissipation tot = ƒ(TC)20406080100120140°C180C
10
15
20
25
30
35
40
45
50
55
65 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0, TC = 25°C10 10 10
A ID
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 104L
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.01.02.03.04.05.06.0V7.5DS
12
16
20
24
28
32
40 D
Drain-source on-resistance DS (on) = ƒ(Tj)
parameter: ID = 8.5 A, VGS = 5 V
-60-202060100°C180j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.28 DS (on)
Typ. forward transconductance gfs
= f (ID)parameter: tp = 80 μs,
VDS≥2 x ID x RDS(on)max
10 fs
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
10
15
20
25
30
40 D
