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BUZ102
N-Channel SIPMOS Power Transistor
BUZ 102
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Maximum Ratings
BUZ 102
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 102
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 102
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 102
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120140°C180C
10
15
20
25
30
35
45 D
Power dissipation tot = ƒ(TC)20406080100120140°C180C
20
40
60
80
100
120
140
160
180
220 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10
K/W thJC
BUZ 102
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.00.51.01.52.02.53.03.54.0V5.0DS
10
20
30
40
50
60
70
80
100 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS10203040506070A90D
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055
0.060
0.070 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
10
15
20
25
30
35
40
45
50
60 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
10
12
14
16
18
20
22
24
26
30 fs
