BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.015R Ω• Enhancem ..
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BUZ100S
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor BUZ 100S
Features Product Summary
. N channel Drain source voltage Vros 55 v
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.015 f2
. Avalanche rated Continuous drain current k, 77 A
. d v/dt rated
q 175°C operating temperature
VPT05184
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
BUZ100S P-T0220-3-1 Q67040-S4001-A2 Tube G D S
BUZ1OOS E3045A P-TO263-3-2 Q67040-S4001-A6 Tape and Reel
BUZ1OOS E3045 P-TO263-3-2 Q67040-S4001-A5 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ''C 77
TC = 100 ( 55
Pulsed drain current IDpuIse 308
TC = 25 "C
Avalanche energy, single pulse EAS 380 mJ
ID = 77A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 17
Reverse diode dv/dt dv/dt kV/ps
ls = 77 A, VDS = 40 V, di/dt= 200 Alps,
ijax = 175 (
Gate source voltage VGS -k-20 V
Power dissipation Ptot 170 W
TC = 25 "C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
,lnfinleon BUZ1OOS
ec no 09y
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.88 KNV
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areaF) - - 40
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ho = 0.25 mA
Gate threshold voltage, VGS = VDs Vesah) 2.1 3 4
ID = 130 yA
Zero gate voltage drain current IDSS pA
1/bs=501/,v'Gs=0v,Tj=2r'C - 0.1 1
VDS=50V,VGS=0V, Tj=150°C - - 100
Gate-source leakage current less - 10 100 nA
VGS=20V, bbs=01/
Drain-Source on-state resistance RDS(on) n
VGS = 10, ID = 55 A - 0.01 0.015
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
