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Partno	Mfg	Dc	Qty	Available	Descript
BUZ10		N/a	120	avai	Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220

BUZ10 ,Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220BUZ10®N - CHANNEL 50V - 0.06Ω - 23A TO-220STripFET™ MOSFETTYPE V R IDSS DS(on) DBUZ10 50 V < 0.0 ..
BUZ100 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = -40 °C 50 - -GS ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.015R Ω• Enhancem ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)CharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
BUZ100SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
BUZ101S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.05R Ω• Enhanceme ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode

BUZ10
Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220
STripFET MOSFET TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

February 2000
ABSOLUTE MAXIMUM RATINGS
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING
BUZ10
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ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
BUZ10
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
BUZ10
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
BUZ10
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
BUZ10
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