BUP304 ,IGBT TransistorBUP 304IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetBUP 311DInfineonIGBT With Antiparallel DiodePreliminary data sheet• Low forward voltage drop High ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetCharacteristicsGate threshold voltage V VGE(th)V = V I = 0.3 mA, T = 25 °C 4.5 5.5 6.5GE CE, C jCol ..
BUP313D ,IGBT Duopack (IGBT with Antiparallel ...BUP 313DIGBT With Antiparallel DiodePreliminary data• Low forward voltage drop• High switching spee ..
BUP603D ,IGBT Duopack (IGBT with Antiparallel ...BUP 603DIGBT With Antiparallel DiodePreliminary data• Low forward voltage drop• High switching spee ..
BUS13A , Silicon NPN Power Transistors
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BUP304
IGBT Transistor
BUP 304
IGBTPreliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Maximum Ratings
BUP 304
Maximum Ratings
Thermal Resistance
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
AC Characteristics
BUP 304
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Switching Characteristics, Inductive Load at Tj = 125 °C
BUP 304
Power dissipation tot = ƒ(TC)
parameter: Tj ≤ 150 °C20406080100120°C160C
40
80
120
160
200
240
320 tot
Collector current C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C20406080100120°C160C
12
16
20
24
28
36 C
Safe operating area C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1 10 10 10 10
A C0 1 2 3
Transient thermal impedance IGBTth JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10
K/W thJC-5 -4 -3 -2 -1 0
BUP 304
Typ. output characteristics
Typ. transfer characteristics
BUP 304
Typ. gate charge GE = ƒ(QGate)
parameter: IC puls = 20 A20406080100120140nC180Gate
10
12
14
16
20 GE
Typ. capacitances
Typ. switching time t = f(RG)
inductive load, with freewheel diode BYP 102
