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Partno	Mfg	Dc	Qty	Available	Descript
BUP303	SIEMENS	N/a	2	avai	IGBT Transistor

BUP303 ,IGBT TransistorBUP 303IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP304 ,IGBT TransistorBUP 304IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
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BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetCharacteristicsGate threshold voltage V VGE(th)V = V I = 0.3 mA, T = 25 °C 4.5 5.5 6.5GE CE, C jCol ..
BUP313D ,IGBT Duopack (IGBT with Antiparallel ...BUP 313DIGBT With Antiparallel DiodePreliminary data• Low forward voltage drop• High switching spee ..
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C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT

BUP303
IGBT Transistor
BUP 303
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Maximum Ratings
BUP 303
Maximum Ratings
Thermal Resistance
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
AC Characteristics
BUP 303
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Switching Characteristics, Inductive Load at Tj = 125 °C
BUP 303
Power dissipation tot = ƒ(TC)
parameter: Tj ≤ 150 °C20406080100120°C160C
20
40
60
80
100
120
140
160
180
220 tot
Collector current C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C20406080100120°C160C
10
12
14
16
18
20
24 C
Safe operating area C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1 10 10 10 10
A C0 1 2 3
Transient thermal impedance IGBTth JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10
K/W thJC-5 -4 -3 -2 -1 0
BUP 303
Typ. output characteristicsC = f(VCE)
parameter: tp = 80 μs, Tj = 125 °C
Typ. transfer characteristicsC = f (VGE)
Typ. saturation characteristics= f (V) = f (V)
BUP 303
Typ. gate charge GE = ƒ(QGate)
parameter: IC puls = 10 A20406080100nC130Gate
10
12
14
16
20 GE
Typ. capacitances
C = f (VCE)
Typ. switching time
t = f (RG), inductive load, Tj = 125 °C

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