BULB128-1 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBULB128-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOROrdering Code Marking ShipmentBULB128-1 BU ..
BULD1101ET4 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBULD1101ET4®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking S ..
BULD118D-1 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
BULD39D-1 ,High voltage fast-switching npn power transistorElectrical characteristicsSymbol Parameter Test Conditions Min. Typ. Max. UnitV = 850VCollector cut ..
BULD39D-1 ,High voltage fast-switching npn power transistorfeatures■ NPN transistor■ High voltage capability■ Minimum lot-to-lot spread for reliable operation ..
BULD39DT4 , High Voltage Fast-Switching NPN Power Transistor
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BULB128-BULB128-1
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BULB128-1HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH HOLE I2 PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
APPLICATIONS: ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
September 2003
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
BULB128-12/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BULB128-13/7
Inductive Fall Time Inductive Storage Time
Resistive Fall Time Resistive Load Storage Time
Reverse Biased SOA
BULB128-14/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
BULB128-15/7
BULB128-16/7
