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BUL416STN/a26avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


BUL416 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS 32■ ELECTRONIC BALLASTS FOR1FLUORE ..
BUL45 ,POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTSTHERMAL CHARACTERISTICSBUL45FCASE 221D–02Rating Symbol MJE18006 MJF18006 UnitISOLATED TO–220 TYPETh ..
BUL45D2 ,NPN Silicon Power Plastic TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
BUL45F ,POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTSMAXIMUM RATINGSRating Symbol BUL45 BUL45F UnitCollector–Emitter Sustaining Voltage V 400 VdcCEOColl ..
BUL49D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL49D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ NPN TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ L ..
BUL510 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS 32■ ELECTRONIC BALLASTS FOR1FLUORES ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A


BUL416
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL416
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC LOW SPREAD OF DYNAMIC PARAMETERS
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION

The BUL416 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
June 2001
ABSOLUTE MAXIMUM RATINGS

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL416

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DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL416

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(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuit
BUL416

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BUL416
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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BUL416

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