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Partno	Mfg	Dc	Qty	Available	Descript
BUL128DB	ST	N/a	1500	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL128D-B \|BUL128DB	ST	N/a	750	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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BUL146 ,Power 8A 400V NPN
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A

BUL128DB-BUL128D-B
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL128D-B
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS: ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
October 2002
ABSOLUTE MAXIMUM RATINGS
1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
BUL128D-B
2/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BUL128D-B
3/7
Inductive Fall Time Inductive Storage Time
Resistive Load Fall Time Resistive Load Storage Time
Reverse Biased SOA
BUL128D-B
4/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Resistive Load Switching Test Circuits.
BUL128D-B
5/7
BUL128D-B
6/7

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