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BUK9107-55ATE
TrenchPLUS logic level FET
BUK91/9907-55A TE renchPLUS logic level FET
Rev. 01 — 7 February 2002 Product data DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9107-55ATE in SOT426 (D2 -PAK)
BUK9907-55ATE in SOT263B.
Features Typical on-state resistance 5.8 mΩ Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection.
Applications Automotive and power switching: 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS)) Protected drive for lamps.
Pinning information
Table 1: Pinning - SOT426 and SOT263B simplified outline and symbol gate (g)
SOT426 (D2 -PAK) SOT263B anode (a) drain (d) cathode (k) source (s) mounting base;
connected to drain (d) Front view MBK127
MBL263
MBL317
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET Quick reference data
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25°C - 55 V drain current (DC) Tmb =25 °C; VGS=5V - 140 A
Ptot total power dissipation Tmb =25°C - 272 W junction temperature - 175 °C
RDSon drain-source on-state resistance Tj =25 °C; VGS =5V; ID =50A 5.8 7 mΩ =25 °C; VGS= 4.5 V; ID =50A 6 7.7 mΩ =25 °C; VGS=10 V; ID=50A 5.2 6.2 mΩ temperature sense diode forward
voltage=25 °C; IF= 250μA 658 668 mV temperature sense diode temperature
coefficient
−55 °C
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET Limiting values
[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 55 V
VDGS drain-gate voltage (DC) - 55 V
VGS gate-source voltage (DC) [1] - ±15 V drain current (DC) Tmb =25 °C; VGS =5V;
Figure2 and3
[2] - 140 A
[3] -75 A
Tmb= 100 °C; VGS =5V; Figure2 [3] -75 A
IDM drain current (peak value) Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 560 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 272 W
IGS(CL) gate-source clamping current continuous - 10 mA=5 ms;δ= 0.01 - 50 mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage ±100 V
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diode
IDR reverse drain current (DC) Tmb =25°C [2] - 140 A
[3] -75 A
IDRM pulsed reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 560 A
Clamping
EDS(CL)S non-repetitive drain-source
clamping energy
unclamped inductive load; ID =75A;
VDS≤55 V; VGS =5V; RGS =50Ω;
starting Tj =25°C 500 mJ
Electrostatic discharge
Vesd electrostatic discharge voltage;
pins 1,3,5
Human Body Model; C= 100 pF;= 1.5kΩ kV
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-a) thermal resistance from junction to
ambient
vertical in still air; SOT263B
package
--60 K/W
mountedon printed circuit board;
minimum footprint; SOT426
package
--50 K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.55 K/W
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified.
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V - - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 1 1.5 2 V= 175°C 0.5 - - V= −55°C - - 2.3 V
IDSS drain-source leakage current VDS=55 V; VGS =0V =25°C - 0.1 10 μA= 175°C - - 250 μA
V(BR)GSS gate-source breakdown
voltage=±1 mA;
−55 °CIGSS gate-source leakage current VGS=±5 V; VDS=0V - 5 1000 nA
RDSon drain-source on-state
resistance
VGS =5V; ID =50A;
Figure7 and8 5.8 7 mΩ= 175 °C- - 14 mΩ
VGS= 4.5 V; ID =50A - 6 7.7 mΩ
VGS =10V; ID=50A - 5.2 6.2 mΩ temperature sense diode
forward voltage
IF= 250μA 648 658 668 mV temperature sense diode
temperature coefficient
IF= 250 μA;
−55 °C−1.4 −1.54 −1.68 mV/K
Vhys temperature sense diode
forward voltage hysteresis
125 μA
Dynamic characteristics
Qg(tot) total gate charge VGS =5V; VDD =44V; =50A; Figure14 108 - nC
Qgs gate-to-source charge - 15 - nC
Qgd gate-to-drain (Miller) charge - 47 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 5836 - pF
Coss output capacitance - 958 - pF
Crss reverse transfer capacitance - 595 - pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =5V; RG =10Ω
-51 - ns rise time - 202 - ns
td(off) turn-off delay time - 341 - ns fall time - 207 - ns
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET internal drain inductance from upper edge of drain
mounting base to centre of
die 2.5 - nH internal source inductance from source lead to source
bond pad 7.5 - nH
Source-drain diode
VSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure17 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-85 - ns recovered charge - 250 - nC
Table 5: Characteristics…continued =25 °C unless otherwise specified.
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET
Philips Semiconductors BUK91/9907-55A TE
TrenchPLUS logic level FET
