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BUK7908-40AIE |BUK790840AIEPHIN/a184avaiN-channel TrenchPLUS standard level FET


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BUK7908-40AIE
TrenchPLUS standard level FET
BUK71/7908-40AIE renchPLUS standard level FET
Rev. 02 — 24 October 2003 Product data Product profile
1.1 Description

N-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
ESD protection � Q101 compliant Integrated current sensor � Standard level compatible. Variable Valve Timing for engines � Electrical Power Assisted Steering. VDS≤40V � RDSon =6mΩ (typ) ID≤ 117A � ID/Isense= 500 (typ).
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
gate (g)
SOT426 (D2-PAK) SOT263B (TO-220AB)
sense current (Isense) drain (d) Kelvin source source (s) mounting base;
connected to drain (d) Front view MBK127
MBL263
MBL368Isense Kelvin source
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET Ordering information Limiting values

[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 2: Ordering information

BUK7108-40AIE D2 -PAK Plastic single-ended surface mounted package;5 leads (one lead cropped) SOT426
BUK7908-40AIE TO-220 Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-leads SOT263B
Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 40 V
VDGR drain-gate voltage (DC) RGS =20kΩ -40 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]- 117 A
[2] -75 A
Tmb= 100 °C; VGS =10V; Figure2 [2] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 468 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 221 W
IGS(CL) gate-source clamping current continuous - 10 mA=5 ms;δ= 0.01 - 50 mA
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diode

IDR reverse drain current (DC) Tmb =25°C [1]- 117 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 468 A
Avalanche ruggedness

EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load;ID =75A;
VDS≤40 V; VGS =10V;
RGS =50 Ω; starting Tj =25°C 0.63 J
Electrostatic discharge

Vesd electrostatic discharge voltage; all
pins
Human Body Model; C= 100 pF;= 1.5kΩ kV
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics

Rth(j-a) thermal resistance from junction to ambient
SOT263B vertical in still air - 60 - K/W
SOT426 minimum footprint; mounted on a PCB - 50 - K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.68 K/W
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET Characteristics
Table 5: Characteristics
=25 °C unless otherwise specified.
Static characteristics

V(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25°C 40 --V= −55°C 36 --V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 2 34V= 175°C 1 --V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS =40V; VGS =0V =25°C - 0.1 10 μA= 175°C - - 250 μA
V(BR)GSS gate-source breakdown
voltage=±1 mA;
−55 °CIGSS gate-source leakage current VGS= ±10 V; VDS =0V =25°C - 22 300 nA= 175 °C- - 10 μA
RDSon drain-source on-state
resistance
VGS=10 V; ID =50A;
Figure7 and8 =25°C - 68mΩ= 175°C - - 15.2 mΩ
RD(Is)on drain-Isense on-state
resistance
VGS=10 V; ID =25mA;
Figure16 =25°C 1.59 1.87 2.20 Ω= 175°C 3.02 3.55 4.18 Ω
ID/Isense ratioof drain currentto sense
current
VGS>10 V; Rsense =0Ω;
−55 °C450 500 550
Dynamic characteristics

Qg(tot) total gate charge VGS=10 V; VDS =32V; =25A; Figure14 7884nC
Qgs gate-source charge - 14 16 nC
Qgd gate-drain (Miller) charge - 34 36 nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 2670 3140 pF
Coss output capacitance - 900 1053 pF
Crss reverse transfer capacitance - 560 653 pF
td(on) turn-on delay time VDS =30V; RL= 1.2Ω;
VGS=10 V; RG =10Ω
-19 - ns rise time - 76 - ns
td(off) turn-off delay time - 121 - ns fall time - 122 - ns
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET
internal drain inductance measured from upper edge
of drain mounting base to
center of die 2.5 - nH internal source inductance measured from source lead
to source bond pad; lead
length 6 mm 7.5 - nH
Source-drain diode

VSD source-drain (diode forward)
voltage=40 A; VGS =0V;
Figure17 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-55 - ns recovered charge - 30 - nC
Table 5: Characteristics…continued
=25 °C unless otherwise specified.
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET
Philips Semiconductors BUK71/7908-40AIE
TrenchPLUS standard level FET
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