IC Phoenix
 
Home ›  B › B34 > BUK763R6-40C,N-channel TrenchMOS standard level FET
BUK763R6-40C Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BUK763R6-40C |BUK763R640CNXPN/a271avaiN-channel TrenchMOS standard level FET


BUK763R6-40C ,N-channel TrenchMOS standard level FETapplicationsBUK763R6-40CNXP SemiconductorsN-channel TrenchMOS standard level FET1.4 Quick reference ..
BUK764R3-40B ,TrenchMOS (tm) standard level FET
BUK765R2-40B ,TrenchMOS (tm) standard level FETApplications■ Automotive systems ■ 12 V loads■ Motors, lamps and solenoids ■ General purpose power ..
BUK7660-100A ,N-channel TrenchMOS standard level FET
BUK7660-100A ,N-channel TrenchMOS standard level FETApplications„ 12 V, 24 V and 42 V loads„ Motors, lamps and solenoids„ Automotive and general purpos ..
BUK7675-100A ,TrenchMOS TM standard level FETApplications■ Automotive and general purpose power switching:cc◆ 12 V, 24 V and 42 V loads◆ Motors, ..
C2260 , TCXO EFC Standard Low Profile Small Size 100 % RoHS compliant
C230M ,Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 600 V.MAXIMUM RATINGS" DEIEBMEES [Imaging 5 r1” "t/g'-tttt'''(CCC-r-r-C-C230, 231C230( w.231 I "C232, 233 ..
c2383 , The C2383 is designed for color TV class B sound output applications
C2383 , The C2383 is designed for color TV class B sound output applications
C2383 , The C2383 is designed for color TV class B sound output applications
C25-28A , COMMUNICATION CABLE

BUK763R6-40C
N-channel TrenchMOS standard level FET
BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010 Product data sheet Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications 12V Motor, lamp and solenoid loads High performance automotive power
systems High performance Pulse Width
Modulation (PWM) applications
NXP Semiconductors BUK763R6-40C
N-channel TrenchMOS standard level FET
1.4 Quick reference data
[1] Continuous current is limited by package. Pinning information Ordering information
Table 1. Quick reference data
VDS drain-source
voltage≥25 °C; Tj≤ 175°C --40 V drain current VGS =10V; Tmb =25°C;
see Figure 1; see Figure 3
[1] --100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --203 W
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; ID =25A; =25°C;
see Figure 11; see Figure 12 3.6 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy =100 A; Vsup≤40V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--292 mJ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A;
VDS =32 V; Tj =25°C;
see Figure 14; see Figure 13
-35 - nC
Table 2. Pinning information
Table 3. Ordering information
BUK763R6-40C D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
NXP Semiconductors BUK763R6-40C
N-channel TrenchMOS standard level FET Limiting values
[1] -20V accumulated duration not to exceed 168 hrs.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --40 V
VDGR drain-gate voltage RGS =20kΩ --40 V
VGS gate-source voltage [1] -20 - 20 V drain current Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
[2] - - 167 A
Tmb =100 °C; VGS=10 V; see Figure 1 [3] - - 100 A
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
[3] - - 100 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed;
see Figure 3 - 668 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - - 203 W
Tstg storage temperature -55 - 175 °C junction temperature -55 - 175 °C
Source-drain diode source current Tmb =25°C [3] - - 100 A
[2] - - 167 A
ISM peak source current tp≤10 µs; pulsed; Tmb=25°C - - 668 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy =100 A; Vsup≤40 V; RGS =50Ω;
VGS =10V; Tj(init)=25 °C; unclamped - 292 mJ
NXP Semiconductors BUK763R6-40C
N-channel TrenchMOS standard level FET
NXP Semiconductors BUK763R6-40C
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance
from junction to
mounting base
see Figure 4 --0.74 K/W
Rth(j-a) thermal resistance
from junction to
ambient
mounted on printed circuit board;
minimum footprint; SOT404 package
--50 K/W
NXP Semiconductors BUK763R6-40C
N-channel TrenchMOS standard level FET Characteristics
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 40 --V =0.25mA; VGS =0V; Tj= -55°C 36 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 10
234V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.4 V
IDSS drain leakage current VDS =40V; VGS =0V; Tj= 175°C - - 500 µA
VDS =40V; VGS =0V; Tj=25°C - 0.02 1 µA
IGSS gate leakage current VDS =0V; VGS =20V; Tj=25°C - 2 100 nA
VDS =0V; VGS =-20 V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 11
--7.2 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12 3.6 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =32V; VGS =10V; =25°C; see Figure 13; see Figure 14
-97 - nC
QGS gate-source charge - 21 - nC
QGD gate-drain charge ID =25A; VDS =32V; VGS =10V; =25°C; see Figure 14; see Figure 13
-35 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 15 4391 5708 pF
Coss output capacitance - 800 1040 pF
Crss reverse transfer
capacitance 535 696 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-40 - ns rise time - 95 - ns
td(off) turn-off delay time - 129 - ns fall time - 92 - ns internal drain
inductance
from drain lead 6 mm from package to
centre of die ; Tj =25°C
-4.5 -nH
from contact screw on mounting base to
centre of die ; Tj =25°C
-3.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 16 0.83 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-44 - ns recovered charge - 57 - nC
NXP Semiconductors BUK763R6-40C
N-channel TrenchMOS standard level FET
ic,good price

TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED