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BUK7618-55
N-channel TrenchMOS standard level FET
Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Electrostatically robust due to
integrated protection diodes Low conduction losses due to low
on-state resistance
1.3 Applications Automotive and general purpose
power switching
1.4 Quick reference data
BUK7618-55
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 55 V drain current Tmb =25°C - - 57 A
Ptot total power dissipation - - 125 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25°C 1518mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =50A; Vsup≤25V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped - 125 mJ
NXP Semiconductors BUK7618-55
N-channel TrenchMOS standard level FET Pinning information Ordering information
Table 2. Pinning information G gate
SOT404 (D2PAK) D drain source D mounting base;
connected to drain
Table 3. Ordering informationBUK7618-55 D2PAK plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
NXP Semiconductors BUK7618-55
N-channel TrenchMOS standard level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -16 16 V drain current Tmb =25°C - 57 A
Tmb =100°C - 40 A
IDM peak drain current Tmb=25 °C; pulsed - 228 A
Ptot total power dissipation Tmb=25°C - 125 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 57 A
ISM peak source current pulsed; Tmb=25°C - 200 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =50A; Vsup≤25 V; RGS =50Ω;
VGS =10V; Tj(init)=25 °C; unclamped 125 mJ
Electrostatic dischargeVesd electrostatic discharge voltage HBM; C= 100 pF; R= 1.5 kΩ; (all pins) - 2 kV
NXP Semiconductors BUK7618-55
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting base
--1.2 K/W
Rth(j-a) thermal resistance from
junction to ambient
minimum footprint; FR4 board - 50 - K/W
NXP Semiconductors BUK7618-55
N-channel TrenchMOS standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 55 --V =0.25mA; VGS =0V; Tj= -55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj=25°C 234V =1mA; VDS =VGS; Tj= 175°C 1 - - V =1mA; VDS =VGS; Tj= -55°C --4.4 V
IDSS drain leakage current VDS =55V; VGS =0V; Tj= 175°C - - 500 µA
VDS =55V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =10V; VDS =0V; Tj=25°C - 0.02 1 µA
VGS =-10 V; VDS =0V; Tj=25°C - 0.02 1 µA
VGS =10V; VDS =0V; Tj= 175°C --20 µA
VGS =-10 V; VDS =0V; Tj= 175°C --20 µA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175°C - - 38 mΩ
VGS =10V; ID =25A; Tj=25°C - 15 18 mΩ
V(BR)GSS gate-source
breakdown voltage
VDS =0V; Tj =25 °C; IG=1 mA 16 --V
VDS =0V; Tj =25 °C; IG=-1 mA 16 --V
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C 1500 2000 pF
Coss output capacitance - 370 470 pF
Crss reverse transfer
capacitance 170 250 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; ID =25A; Tj =25°C 1522ns rise time - 30 60 ns
td(off) turn-off delay time - 35 50 ns fall time - 2538ns internal drain
inductance
measured from upper edge of drain
mounting base to centre of die; =25°C
-2.5 -nH internal source
inductance
measured from source lead soldering
point to source bond pad; Tj =25°C
-7.5 -nH
gfs transfer conductance VDS =25V; ID =25A; Tj =25°C 6 30 - S
Source-drain diodeVSD source-drain voltage IS =50A; VGS =0V; Tj =25°C - 1 - V =25A; VGS =0V; Tj=25°C - 0.95 1.2 V
trr reverse recovery time IS =50A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-48 - ns recovered charge - 0.1 - µC
NXP Semiconductors BUK7618-55
N-channel TrenchMOS standard level FET
