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BUK7516-55A |BUK751655APHN/a450avaiN-channel TrenchMOS standard level FET


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BUK7516-55A
N-channel TrenchMOS standard level FET
Product profile1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low
on-state resistance Suitable for standard level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data

BUK7516-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 26 January 2011 Product data sheet
Table 1. Quick reference data

VDS drain-source
voltage≥25 °C; Tj≤ 175°C --55 V drain current VGS =10V; Tmb =25°C;
see Figure 1; see Figure 3
--65.7 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --138 W
Static characteristics

RDSon drain-source
on-state
resistance
VGS =10V; ID =25A; = 175 °C; see Figure 12;
see Figure 13
--32 mΩ
VGS =10V; ID =25A; =25°C; see Figure 12;
see Figure 13 1316mΩ
Avalanche ruggedness

EDS(AL)S non-repetitive
drain-source
avalanche energy =49A; Vsup≤55V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--120 mJ
NXP Semiconductors BUK7516-55A
N-channel TrenchMOS standard level FET Pinning information
Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information

BUK7516-55A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -20 20 V drain current Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3 65.7 A
Tmb =100 °C; VGS=10 V; see Figure 1 - 46.5 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 263 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 138 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode
source current Tmb=25°C - 65.7 A
NXP Semiconductors BUK7516-55A
N-channel TrenchMOS standard level FET

ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 263 A
Avalanche ruggedness

EDS(AL)S non-repetitive drain-source
avalanche energy =49A; Vsup≤55 V; RGS=50Ω;
VGS =10V; Tj(init)=25 °C; unclamped 120 mJ
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors BUK7516-55A
N-channel TrenchMOS standard level FET Thermal characteristics
Characteristics
Table 5. Thermal characteristics

Rth(j-mb) thermal resistance
from junction to
mounting base
see Figure 4 --1.1 K/W
Rth(j-a) thermal resistance
from junction to
ambient
vertical in still air - 60 - K/W
Table 6. Characteristics
Static characteristics

V(BR)DSS drain-source
breakdown voltage= 0.25 mA; VGS =0V; Tj=25°C 55 --V= 0.25 mA; VGS =0V; Tj= -55°C 50 --V
VGS(th) gate-source threshold
voltage=1 mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V=1 mA; VDS =VGS; Tj= -55 °C;
see Figure 11
--4.4 V=1 mA; VDS =VGS; Tj =25°C;
see Figure 11
234V
NXP Semiconductors BUK7516-55A
N-channel TrenchMOS standard level FET

RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 12; see Figure 13
--32 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 12; see Figure 13 13 16 mΩ
Dynamic characteristics

Ciss input capacitance VGS =0V; VDS =25V; f= 1MHz; =25 °C; see Figure 14 1580 2245 pF
Coss output capacitance - 370 423 pF
Crss reverse transfer
capacitance 220 312 pF
td(on) turn-on delay time VDS =30V; RL= 1.2 Ω; VGS =10V;
RG(ext)=10 Ω; Tj=25°C 16 - ns rise time -70 -ns
td(off) turn-off delay time -57 -ns fall time -41 -ns internal drain
inductance
from contact screw on mounting base to
centre of die ; Tj =25°C 3.5 - nH
from drain lead 6 mm from package to
centre of die ; Tj =25°C 4.5 - nH internal source
inductance
from source lead to source bond pad; =25°C 7.5 - nH
Source-drain diode

VSD source-drain voltage IS =25A; VGS =0V; Tj=25 °C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS= -10 V; VDS=30 V; Tj =25°C 48 - ns recovered charge - 106 - nC
Table 6. Characteristics …continued
NXP Semiconductors BUK7516-55A
N-channel TrenchMOS standard level FET
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