BUJ103A ,Silicon Diffused Power Transistorapplications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENC ..
BUJ103AD ,Silicon diffused power transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BUJ103AX ,Silicon Diffused Power Transistorapplications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENC ..
BUJ105AB ,Silicon Diffused Power Transistor
BUK100-50GL ,PowerMOS transistor Logic level TOPFET
BUK100-50GS ,PowerMOS transistor TOPFET
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012X5R1A225K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
C2042 , Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage
BUJ103A
Silicon Diffused Power Transistor
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103A
GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V Collector current (DC) 2 - 4 A
ICM Collector current peak value - 8 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 80 W
VCEsat Collector-emitter saturation voltage IC = 3.0 A;IB = 0.6 A 0.25 1.0 V
hFEsat IC = 3.0 A; VCE = 5 V 12.5 - Fall time Ic=2A,IB1=0.4A 33 80 ns
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION base collector emitter
tab collector
LIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVCESM Collector to emitter voltage VBE = 0 V - 700 V
VCEO Collector to emitter voltage (open base) - 400 V
VCBO Collector to base voltage (open emitter) - 700 V Collector current (DC) - 4 A
ICM Collector current peak value - 8 A Base current (DC) - 2 A
IBM Base current peak value - 4 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 80 W
Tstg Storage temperature -65 150 ˚C Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNITRth j-mb Junction to mounting base - 1.56 K/W
Rth j-a Junction to ambient in free air 60 - K/W3
tab
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103A
STATIC CHARACTERISTICSTmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITICES Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
ICBO Collector cut-off current 1 VCBO = VCESMmax (700V) - - 0.1 mA
ICEO VCEO = VCEOMmax (400V) - - 0.1 mA
IEBO Emitter cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - 0.25 1.0 V
VBEsat Base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - 0.97 1.5 V
hFE DC current gain IC = 1 mA; VCE = 5 V 10 17 32
hFE IC = 500 mA; VCE = 5 V 12 20 32
hFEsat IC = 2.0 A; VCE = 5 V 13.5 16 20
IC = 3.0 A; VCE = 5 V - 12.5 -
DYNAMIC CHARACTERISTICSTmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNITSwitching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4V;
ton Turn-on time 0.52 0.6 μs Turn-off storage time 2.7 3.2 μs Turn-off fall time 0.3 0.43 μs
Switching times (inductive load) ICon = 2 A; IBon = 0.4 A; LB = 1 μH;
-VBB = 5 V Turn-off storage time 1.2 1.4 μs Turn-off fall time 33 80 ns
Switching times (inductive load) ICon = 2 A; IBon = 0.4 A; LB = 1 μH;
-VBB = 5 V; Tj = 100 ˚C Turn-off storage time - 1.8 μs Turn-off fall time - 200 ns
1 Measured with half sine-wave voltage (curve tracer).
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103A
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 μs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
30-60 Hz
300R
90 %90 %
ICon
VCEOsust
IC / mA
250IBon
-VBB
T.U.T.
VCC
T.U.T.0
VIM B
-IBoff
10 %
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103A
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
Fig.8. Typical DC current gain. hFE = f(IC)
parameter VCE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T 20 40 60 80 100 120 140
Tmb / C120
110
100
90
80
70
60
50
40
30
20
10 0.0
0.1 1 10
IC/A
VBEsat/V0.01 1
0.1 10
IC / A
Tj = 25 C 1V
0.1 1 10
IC/A
VCEsat/V0.01 0.10 1.00 10.00
IB/A
VCEsat/V1E-06 1E-04 1E-02 1E+00
t / s10
0.01
Silicon Diffused Power Transistor BUJ103A
Fig.13. Reverse bias safe operating area Tj ≤ Tjmax
Fig.14. Test Circuit for reverse bias safe operating
area.
Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1μH;
Lc = 200μH
Fig.15. Forward bias safe operating area. Ths ≤ 25 ˚C
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 μs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope. 100 200 300 400 500 600 700 800 900
VCEclamp (V)
IC (A)
IC (A)
Icm max
Ic max
Duty Cycle = 0.01IBon
-VBB
T.U.T.
VCC
VCL
