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Partno	Mfg	Dc	Qty	Available	Descript
BUH1215		N/a	52	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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BUH1215
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH1215
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY VERYHIGH SWITCHING SPEED
APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR AND MONITORS
DESCRIPTION
The BUH1215 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and usesa Hollow Emitter
structureto enhance switching speeds.
The BUH seriesis designed for usein horizontal
deflection circuitsin televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE=0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 16 A
ICM Collector Peak Current(tp <5 ms) 22 A Base Current 9 A
IBM Base Peak Current(tp <5 ms) 12 A
Ptot Total DissipationatTc =25oC 200 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
TO-218
1/7
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.63 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE= 1500V
VCE= 1500V Tj =125oC
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 100 μA
VCEO(sus) Collector-Emitter
Sustaining Voltage= 100 mA 700 V
VEBO Emitter-Base Voltage
(IC =0) =10 mA 10 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =12A IB= 2.4A 1.5 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =12A IB= 2.4A 1.5 V
hFE∗ DC Current Gain IC =12A VCE =5V =12A VCE =5V Tj =100oC 14
RESISTIVE LOAD
Storage Time
Fall Time
VCC =400V IC =12A
IB1 =2A IB2 =-6A 1.5
INDUCTIVE LOAD
Storage Time
Fall Time=12A f= 31250 Hz
IB1 =2A IB2 =-1.5A
Vceflyback =1050 sin106
INDUCTIVE LOAD
Storage Time
Fall Time =6A f =64 KHz
IB1 =1A VBE(off) =-2A
Vceflyback =1200 sin106
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
Safe Operating Area Thermal Impedance
BUH1215
2/7
Derating Curve
Collector Emitter Saturation Voltage
Power Lossesat64 KHz Current Gain
Base Emitter Saturation Voltage
Switching Time InductiveLoadat64 KHz
(see figure2)
BUH1215
3/7
Reverse Biased SOA orderto saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 hasto be provided for the lowest gain hFEat
100oC (line scan phase). On the other hand,
negative base current IB2 must be provided the
transistorto turnoff (retrace phase).
Most of the dissipation, especially in the
deflection application, occursat switch-offsoitis
essentialto determine the value of IB2 which
minimizes power losses, fall timetf and,
consequently,Tj.A new setof curves have been
definedto give total power losses,ts andtf asa
functionof IB1at64 KHz scanning frequenciesfor
choosing the optimum negative drive. The test
circuitis illustratedin figure1.
The valuesofL andC are calculated from the
following equations:L (IC)2=1C (VCEfly)22πf= 1LC
WhereIC= operating collector current, VCEfly=
flyback voltage,f= frequencyof oscillation during
retrace.
BASE DRIVE INFORMATION
BUH1215
4/7
Figure1: Inductive Load Switching Test Circuits.
Figure2: Switching Waveformsina Deflection Circuit
BUH1215
5/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.7 4.9 0.185 0.193 1.17 1.37 0.046 0.054 2.5 0.098 0.5 0.78 0.019 0.030 1.1 1.3 0.043 0.051 10.8 11.1 0.425 0.437 14.7 15.2 0.578 0.598 – 16.2 – 0.637 18 0.708 3.95 4.15 0.155 0.163 31 1.220 – 12.2 – 0.480 4 4.1 0.157 0.161
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUH1215
6/7

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