BU808DFI ,HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTORBU808DFI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR■ STMicroelectronics PREFERREDSA ..
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BU808DFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR
BU808DFIHIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184
APPLICATIONS COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION The BU808DFI is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
April 2002
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
BU808DFI2/7
Derating Curve
Collector Emitter Saturation Voltage
Power Losses at 16 KHz
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load at 16KHz
BU808DFI3/7
Switching Time Inductive Load at 16KHZ Reverse Biased SOA
BASE DRIVE INFORMATIONIn order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at both 16 KHz scanning
frequencies for choosing the optimum negative
drive. The test circuit is illustrated in figure 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations: L (IC)2 = 1 C (VCEfly)2 ω = 2 πf = 1L C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BU808DFI4/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
BU808DFI5/7
BU808DFI6/7
