BU508AFI ,Silicon NPN Power Transistors TO-3PML packageBU208ABU508A/BU508AFI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ STMicroelectronics PREFERRE ..
BU508AFI ,Silicon NPN Power Transistors TO-3PML packageBU208ABU508A/BU508AFI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ STMicroelectronics PREFERRE ..
BU508DFI ,Silicon NPN Power Transistors TO-3PML packageBU508DFI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HI ..
BU508DX ,Silicon Diffused Power Transistor
BU508DX ,Silicon Diffused Power Transistor
BU52011HFV-TR , Omnipolar Detection Hall ICs
C157C , INDUSTRIAL LINEAR ICS
C1608X5R1C105KT000N , Multilayer Ceramic Chip Capacitors
C1608X5R1C105KT000N , Multilayer Ceramic Chip Capacitors
C16P20FR , Low Forward Voltage drop Diode
C16P40FR , Low Forward Voltage drop Diode
C16T40F , Low Forward Voltage Drop Diode
BU508A-BU508AFI
Leaded Power Transistor General Purpose
BU208A
BU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS STMicroelectronics PREFERRED
SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
April 2002
ABSOLUTE MAXIMUM RATINGS1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area (TO-3) Safe Operating Areas (TO-218/ISOWATT218)
BU208A / BU508A / BU508AFI2/8
Derating Curves (TO-3)
DC Current Gain
Base Emitter Saturation Voltage
Derating Curves (TO-218/ISOWATT218)
Collector Emitter Saturation Voltage
Switching Time Inductive Load
BU208A / BU508A / BU508AFI3/8
Figure 1: Inductive Load Switching Test Circuit.Switching Time Inductive Load
BU208A / BU508A / BU508AFI4/8
BU208A / BU508A / BU508AFI5/8
BU208A / BU508A / BU508AFI6/8
