BTW69-1000 Fast Delivery |IC PHOENIX CO.,LIMITED

BTW69-1000 ,SCR, 50A, 1000VFEATURES. HIGH SURGE CAPABILITY. HIGH ON-STATE CURRENT. HIGH STABILITY AND RELIABILITY. BTW 69 Seri ..
BTW69-1200 ,50A SCRSapplications wherepower handling and power dissipation are critical,RD91such as solid state relays, ..
BTW69-1200RG ,50A SCRSapplications wherepower handling and power dissipation are critical,RD91such as solid state relays, ..
BTW69-1200RG ,50A SCRSapplications wherepower handling and power dissipation are critical,RD91such as solid state relays, ..
BTW69-800 ,SCR, 50A, 800VFEATURES:Symbol Value UnitI50 AT(RMS)V /V600to1200 VDRM RRMI80 mAGTDESCRIPTIONAvailable in high pow ..
BTW69-800RG ,50A SCRSFEATURES:Symbol Value UnitI50 AT(RMS)V /V600to1200 VDRM RRMI80 mAGTDESCRIPTIONAvailable in high pow ..
C023M-15 , LOW LOSS SUPER HIGH SPEED RECTIFIER
C023M-15 , LOW LOSS SUPER HIGH SPEED RECTIFIER
C023M-15 , LOW LOSS SUPER HIGH SPEED RECTIFIER
C0603C101J5GAC , Ceramic Capacitor
C0603C101J5GAC , Ceramic Capacitor
C0603C102K5RAC , Ceramic Capacitor

BTW69-1000
SCR
BTW 69( N)
SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180° conduction angle)
BTW69
BTW69N
Tc=70°C
Tc=75°C
IT(AV) Average on-state current (180°
conduction angle,single phase circuit)
BTW69
BTW69N
Tc=70°C
Tc=75°C
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)
tp=8.3ms 525 A
tp=10ms 500
I2tI2t value tp=10ms 1250 A2s
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 100 mA diG/dt=1 A/μs
100 A/μs
Tstg
Storage and operating junction temperature range - 40to+ 150 40to+ 125 Maximum lead temperaturefor soldering during10sat 4.5 mm
from case
230 °C
TOP3
(Plastic) HIGH SURGE CAPABILITY. HIGH ON-STATE CURRENT. HIGH STABILITY AND RELIABILITY. BTW69 Serie:
INSULATED VOLTAGE= 2500V(RMS)
(UL RECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTW69 BTW69/ BTW69N Unit
200 400 600 800 1000 1200
VDRM
VRRM
Repetitive peak off-state voltage= 125°C
200 400 600 800 1000 1200 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTW69 (N) Familyof Silicon Controlled Recti-
fiers usesa high performance glass passivated
technology.
This general purpose Familyof Silicon Controlled
Rectifiersis designed for power supplies up to
400Hzon resistiveor inductive load.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junctionto ambient 50 °C/W
Rth (j-c) DC Junctionto caseforDC BTW69 0.9 °C/W
BTW69N 0.8
Symbol Test Conditions Value Unit
BTW69 BTW69N
IGT VD=12V (DC) RL=33Ω Tj=25°C MAX 80 mA
VGT VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=V DRMIG= 200mA
dIG/dt= 1.5A/μs
Tj=25°C TYP 2 μs IG= 1.2 IGT Tj=25°C TYP 50 mA IT= 500mA gate open Tj=25°C MAX 150 mA
VTM BTW69 ITM= 100A
BTW69N ITM= 110A tp= 380μs
Tj=25°C MAX 1.9 2.0 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.02 mA
Tj= 125°C6
dV/dt Linear slopeupto
VD=67%VDRM
gate open
VDRM≤ 800V
VDRM≥ 1000V
Tj= 125°C MIN 500
V/μs VD=67%VDRM ITM= 110A VR= 75V
dITM/dt=30 A/μsdVD/dt= 20V/μs
Tj= 125°C TYP 100 μs (AV) =1W PGM= 40W(tp=20 μs) IFGM=8A(tp=20 μs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTW 69 (N)
Fig.3: Maximum average power dissipation versus
average on-state current (BTW 69N).
Fig.4: Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink+
contact (BTW69 N).
Fig.1: Maximum average power dissipation versus
average on-state current (BTW 69).
Fig.2: Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink+
contact (BTW 69).
Package IT(RMS) VDRM /VRRM Sensitivity Specification V BTW
BTW69
(Insulated) 200 X
400 X
600 X
800 X
1000 X
1200 X
BTW69N
(Uninsulated) 600 X
800 X
1000 X
1200 X
BTW 69 (N)
Fig.8: Relative variationof gate trigger current versus
junction temperature.
Fig.9: Non repetitive surge peak on-state current
versus numberof cycles.
Fig.5: Average on-state current versus case
temperature (BTW 69).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7: Relative variationof thermal impedance versus
pulse duration.
Fig.6: Average on-state current versus case
temperature (BTW69N).
Fig.10: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t≤ 10 ms, and
corresponding valueof I2t.
BTW 69 (N)
Fig11: On-state characteristics (maximum values).
Cooling method:C
Marking: type number
Weight:4.7g
Recommended torque value:0.8 m.N.
Maximum torque value:1 m.N.
R4.6I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 15.10 15.50 0.594 0.611 20.70 21.10 0.814 0.831 14.30 15.60 0.561 0.615 16.10 16.50 0.632 0.650 3.40 - 0.133 - 4.40 4.60 0.173 0.182 4.08 4.17 0.161 0.164 1.45 1.55 0.057 0.062 0.50 0.70 0.019 0.028 2.70 2.90 0.106 0.115 5.40 5.65 0.212 0.223 1.20 1.40 0.047 0.056
PACKAGE MECHANICAL DATA
TOP3 Plastic
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability
forthe consequencesof useof such informationnorfor any infringementof patentsor other rightsof third parties which may
result fromits use. Nolicense isgranted byimplication orotherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publication are subjectto change without notice. This publication supersedes and replacesall
information previously supplied.
SGS-THOMSON Microelectronics products arenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil- France- Germany- Hong Kong- Italy- Japan- Korea- Malaysia- Malta- Morocco- The Nether-
lands Singapore- Spain- Sweden- Switzerland- Taiwan- Thailand- United Kingdom- U.S.A.
BTW 69 (N)
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.

Partno	Mfg	Dc	Qty	Available	Descript
BTW69-1000 \|BTW691000	ST	N/a	1000	avai	SCR, 50A, 1000V