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BTS949
Smart Low Side Switches
HITFET
BTS 949
Smart Lowside Power Switch
Features• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Maximum current adjustable with external resistor
• Current sense
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Application• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• μC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
BTS 949
Maximum Ratings at Tj = 25 °C unless otherwise specified
Thermal resistance1A sensor holding current of 500 μA has to be guaranted in the case of thermal shutdown (see also page 3)
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 949
Electrical Characteristics
Characteristics
BTS 949
Electrical Characteristics
Characteristics
Dynamic Characteristics
Protection Functions
Inverse Diode1Device switched on into existing short circuit (see diagram Determination of ID(lim). Dependant on the
BTS 949
Block Diagramm
TermsInductive and overvoltage output clamp
HITFETINDVDS1INbbCCVHITFET
Short circuit behaviourThe ground lead impedance of RCC
should be as low as possibleINDD(SCp)
t 0tmt 2
ID(Lim)
t 1
Input circuit (ESD protection)ESD zener diodes are not designed
for DC current > 2 mA @ VIN>10V.0: Turn on into a short circuitm: Measurementpoint for ID(lim)1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
BTS 949
On-state resistanceON = f(Tj); ID=19A; VIN=10V
10
15
20
25
30
40
DS(on)
Maximum allowable power dissipationtot = f(Tc)20
40
60
80
100
120
140
160
180
200
220
260
tot
On-state resistanceON = f(Tj); ID= 19A; VIN=5V
10
15
20
25
30
35
45
DS(on)
Typ. input threshold voltageIN(th) = f(Tj); ID=3,9A; VDS=12V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
IN(th)
