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BTS640S2-BTS640S2G
Smart Sense High-Side Power Switch
® Smart Sense High-Side
Power Switch
Features • Short circuit protection
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output
• Fast demagnetization of inductive loads
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump (with
external GND-resistor)
• Reverse battery protection (with external GND-resistor)
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Block Diagram Logic
PROFET
Load GND
Product Summary
Package BTS 640 S2 Maximum Ratings at Tj = 25 °C unless otherwise specified Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended).
BTS 640 S2 Thermal Characteristics Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Load Switching Capabilities and Characteristics
BTS 640 S2 Operating Parameters 5) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V
6) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 9. Add IST, if IST > 0, add IIN, if VIN>5.5 V
BTS 640 S2 Protection Functions8)
Diagnostic Characteristics Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
10) This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by
a factor of two by matching the value of kILIS for every single device.
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is
High. See figure 2b, page 11.
BTS 640 S2 Input and Status Feedback15) 13) not subject to production test, specified by design
14) External pull up resistor required for open load detection in off state.
15) If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 640 S2 Truth Table L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
16) The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is
zero
17) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
18) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
19) Power Transistor off, high impedance
20) with external resistor between pin 4 and pin 6&7
BTS 640 S2 Terms
PROFETOUT
GND
VSTVIN
ISTINbb
IbbGNDIS
IISOUTON
OUT7GND
Input circuit (ESD protection) The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output GNDST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 440 Ω at 1.6 mA, The use of ESD zener
diodes as voltage clamp at DC conditions is not
recommended.
Current sense output V
ESD-Zener diode: 6.1 V typ., max 14 mA;
RIS = 1 kΩ nominal
Inductive and overvoltage output clamp GNDPROFET
VON clamped to 47 V typ.
