IC Phoenix
 
Home ›  BB32 > BTS432I2,Smart Highside Power Switch
BTS432I2 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BTS432I2INFINEOMN/a2000avaiSmart Highside Power Switch


BTS432I2 ,Smart Highside Power SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BTS436L2 ,Smart High-Side Power Switch One Channel: 38m Status FeedbackBlock Diagram Protection Functions Vbb• Short circuit protection • Overload protection • Current l ..
BTS436L2 G , Smart High-Side Power Switch One Channel: 38mΩ Status Feedback
BTS436L2 S ,Smart High Side SwitchesBlock Diagram Protection Functions Vbb• Short circuit protection • Overload protection • Current l ..
BTS436L2G , Smart High-Side Power Switch One Channel: 38mΩ Status Feedback
BTS441R ,Smart High Side Switches BTS 441 R Smart Highside Power Switch One Channel: 20mΩ Status Feedback Product Summary ..
BZX84C56LT1 ,Zener DiodeElectrical Characteristics table on page 3 ofthis data sheet. Semiconductor Components Industries, ..
BZX84C56LT1G , Zener Voltage Regulators
BZX84-C56V ,Small Signal Zener DiodesElectrical CharacteristicsPartnumber Marking Zener Dynamic Resistance Test Temp. Test Reverse Leaka ..
BZX84C5V1 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEElectrical CharacteristicsT = 25

BTS432I2
Smart Highside Power Switch
PROFET® BTS 432 I2
Smart Highside Power Switch
Features
· Load dump and reverse battery protection1) Clamp of negative voltage at output· Short-circuit protection· Current limitation· Thermal shutdown· Diagnostic feedback· Open load detection in OFF-state· CMOS compatible input· Electrostatic discharge (ESD) protection· Loss of ground and loss of Vbb protection2)
· Overvoltage protection
· Undervoltage and overvoltage shutdown with auto-restart and
hysteresis
Application
· mC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays and discrete circuits
General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protectionfunctions.
PROFET
Load GND

Product Summary
8058-3238423311
BTS 432 I2
Maximum Ratings at Tj = 25 °C unless otherwise specifiedUnit
AW
K/W
3)VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 432 I2
Electrical CharacteristicsUnit
Load Switching Capabilities and Characteristics
AmA
Operating Parameters
VVVVV
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT »Vbb - 2 V
BTS 432 I2
Protection Functions
Diagnostic Characteristics
mA
)Short circuit current limit for max. duration of 400 ms, prior to shutdown (see td(SC) page 4)While demagnetizing load inductance, dissipated energy in PROFET is EAS= ò VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2L * (VON(CL)
VON(CL) - Vbb ), see diagram page 8
10)Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current IGND of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under thesecondition is dependent on the size of the heatsink. Reverse I can be reduced by an additional external
BTS 432 I2
Input and Status Feedback11)
VVVmsms

11)If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 432 I2
Truth Table
Input-OutputLL

L = "Low" LevelH = "High" Level

14)Power Transistor off, high impedance
Terms
Input circuit (ESD protection)

ZDI1 6.1 V typ., ESD zener diodes are not designed forcontinuous current
Status output

Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ,ESD zener diodes are not designed for continuouscurrent
Short Circuit detection

Fault Condition: VON > 8.3 V typ.; IN high
BTS 432 I2
Inductive and overvoltage output clamp

VON clamped to 58 V typ.
Overvolt. and reverse batt. protection

Rbb = 120 W typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Open-load detection

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
GND disconnect

Any kind of load. In case of Input=high is VOUT » VIN - VIN(T+) .Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up

Any kind of load. If VGND > VIN - VIN(T+) device stays offDue to VGND >0, no VST = low signal available.
Vbb disconnect with charged inductiveload
BTS 432 I2
Inductive Load switch-off energy
dissipation

Energy dissipated in PROFET EAS = Ebb + EL - ER.
ELoad < EL, EL = 1/2 * L * I2L
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED