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BTS432D2SIEMENSN/a208avaiSmart Highside Power Switch


BTS432D2 ,Smart Highside Power SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
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BTS432D2
Smart Highside Power Switch
PROFET® BTS 432 D2
Smart Highside Power Switch
Features
· Load dump and reverse battery protection1) Clamp of negative voltage at output· Short-circuit protection· Current limitation· Thermal shutdown· Diagnostic feedback· Open load detection in ON-state· CMOS compatible input· Electrostatic discharge (ESD) protection· Loss of ground and loss of Vbb protection2)
· Overvoltage protection
· Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
Application
· mC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays and discrete
circuits
General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protectionfunctions.

Product Summary
8058-3238443511
BTS 432 D2
Maximum Ratings at Tj = 25 °C unless otherwise specifiedUnit
AW
K/W
3)VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 432 D2
Electrical CharacteristicsUnit
Load Switching Capabilities and Characteristics
AmA
Operating Parameters
VVVVV

BTS 432 D2
Protection Functions
Diagnostic Characteristics

Add IST, if IST > 0, add IIN, if VIN>5.5 VShort circuit current limit for max. duration of 400 ms, prior to shutdown (see td(SC) page 4)While demagnetizing load inductance, dissipated energy in PROFET is EAS= ò VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2L * (VON(CL)
VON(CL) - Vbb ), see diagram page 8
10)Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current IGND of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under thesecondition is dependent on the size of the heatsink. Reverse I can be reduced by an additional external
BTS 432 D2
Input and Status Feedback11)
VVmAms

11)If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 432 D2
Truth Table
Input-Output

432LHLLL16)16)
L = "Low" LevelH = "High" Level

14)Power Transistor off, high impedance
Terms
Input circuit (ESD protection)

ZDI1 6.1 V typ., ESD zener diodes are not designed forcontinuous current
Status output

Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ,ESD zener diodes are not designed for continuouscurrent
Short Circuit detection

Fault Condition: VON > 8.3 V typ.; IN high
BTS 432 D2
Inductive and overvoltage output clamp

VON clamped to 58 V typ.
Overvolt. and reverse batt. protection

Rbb = 120 W typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Open-load detection

ON-state diagnostic condition: VON < RON * IL(OL); INhigh
GND disconnect

Any kind of load. In case of Input=high is VOUT » VIN - VIN(T+) .Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up

Any kind of load. If VGND > VIN - VIN(T+) device stays offDue to VGND >0, no VST = low signal available.
Vbb disconnect with charged inductiveload
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