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BTS4141NINFINEONN/a8424avaiSmart High Side Switches


BTS4141N ,Smart High Side SwitchesFeaturesProduct Summary• Short circuit protectionOvervoltage protection V 47 Vbb(AZ)• Current limit ..
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BTS4141N
Smart High Side Switches
BTS 4141N
Smart High-Side Power Switch
1 Channel: 1 x 200mΩ
Features

• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Product Summary

SOT-223
Application

• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
BTS 4141N
Block Diagram
3Rin
+ Vbb
Signal GND
ESDiniPROFET®
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifterTemperature
sensorRectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
Load GND
Load
Logic
Overvoltage
protection
BTS 4141N
Maximum Ratings
defined by PtotAt VIN > Vbb, the input current is not allowed to exceed ±5 mA.defined by PtotDevice on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.not subject to production test, specified by designVLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
BTS 4141N
Electrical Characteristics
Thermal Characteristics
Load Switching Capabilities and Characteristics
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.Nominal load current is limited by the current limitation ( see page 5 )
BTS 4141N
Electrical Characteristics
Operating Parameters
Protection Functions
2)higher current due temperature sensorIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
BTS 4141N
Electrical Characteristics
Input
Reverse Battery
At VIN > Vbb, the input current is not allowed to exceed ±5 mA.not subject to production test, guaranted by designdefined by P
BTS 4141N
EMC-Characteristics

All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:

If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage: Vbb = 13.5V Temperature: Ta = 23 ±5°C ;
Load: RL = 220Ω
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.: RGND
Fast electrical transients

Acc. ISO 7637
The test pulses are applied at Vbb
Definition of functional status
Test circuit:
L
Pulse
Bat.
RGND
BTS 4141N
Conducted Emission

Acc. IEC 61967-4 (1Ω / 150Ω method)
Typ. Vbb-Pin Emission at DC-On with 150
Ω-matching network
0,11101001000
f / MHz
dBµ
Typ. Vbb-Pin Emission at PWM-Mode with 150
Ω-matching network
0,11101001000
f / MHz
Test circuit:

5µH
5µH
RGND
BTS 4141N
Conducted Susceptibility

Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection: Forward Power CW
Failure criteria: Amplitude and frequency deviation max. 10% at Out
Typ. Vbb-Pin Susceptibility at DC-On/Off
101001000
f / MHz
Typ. Vbb-Pin Susceptibility at PWM-Mode
101001000
f / MHz
Test circuit:
5µH
5µH
RGND
BTS 4141N
TermsInductive and overvoltage output clamp

+ Vbb
OUT
GNDZON
PROFET
OUT
GNDININbbbbLOUTIGNDONGND
VON clamped to 63 V min.
Input circuit (ESD protection)
Overvoltage protection of logic part

GND
GNDR
Signal GNDZ2
optionalThe use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
VZ2=Vbb(AZ)=47V min.,
RI=3 kΩ typ., RGND=150Ω Reverse battery protectionRGND=150Ω, RI=3kΩ typ.,
Temperature protection is not active during inverse
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