BTS110 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic● The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS110 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
BTS112A ,TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electricalIy shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS113A ,Temperature Protected SwitchDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 5.8 A 4.5 7.5 –DS D DS(on) ..
BTS113A ,Temperature Protected Switchcharacteristic3 The drain pin is electrically shorted to the tab 21Pin 1 2 3GD SType V I R Package ..
BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BZX84C3V6LT1 ,SEMICONDUCTOR(TECHNICAL DATA)Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BZX84C3V6LT1G ,Zener Voltage RegulatorsFeatures• Pb−Free Packages are Available• 225 mW Rating on FR−4 or FR−5 Board3• Zener Breakdown Vol ..
BZX84C3V6W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BZX84C3V9 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures
BTS110
N-Channel TEMPFET
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TEMPFET®
Features
0 N channel
0 Enhancementmode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
BTS11O
Pin 1 3
Type Fa, ID RDSM, Package Ordering Code
BTS 110 100 V 10 A 0.2 Q TO-220AB C67078-A5008-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 100 V
Drain-gate voltage, RGS = 20 k9 VDGR 100
Gate-source voltage VGS i 20
Continuous drain current, T0 = 25 °C h, 10 A
ISO drain current ID_ISO 1.75
TC = 85°C, VGS =1OV, VDS = 0.5V
Pulsed drain current, TC = 25 00 h, puls 40
Short circuit current, T, = - 55 ... + 150 °C fsc 37
Short circuit dissipation, T, = - 55 ... + 150 °C PSCmax 500 W
Power dissipation Ptot 40
Operating and storage temperature range Tj, Tstg - 55 .w. + 150 °C
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance KNV
Chip-case Re, JC 3 3.1
Chip-ambient RthJA < 75
Semiconductor Group
SHEMIENS BT31”
Electrical Characteristics
at h' = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS=0,ID=1mA 100 - -
Gate threshold voltage Vegan,
VGS = VDS, ID = 1 mA 2.5 3.0 3.5
Zero gate voltage drain current IDSS WA
VGS= 0V, VDS=100V
T, = 25 °C - 1 10
T, = 125 °C - 100 300
Gate-source leakage current IGSS
VGS = 20 V, VDS = 0
T, = 25 °C - 10 100 nA
T, = 150 °C - 2.0 4.0 “A
Drain-source on-state resistance RDS(0n) f2
VGS=10V,ID=5A - 0.17 0.2
Dynamic Characteristics
Forward transconductance gfs S
VDS 2 2 M ID M RDS(on)max: ID = 5 A 2.7 3.8 8.0
Input capacitance Ciss pF
' = 0, VDS = 25 V,f= 1 MHz - 450 600
Output capacitance Coss
"ss=0,VDs--25V,f--1MHz - 150 240
Reverse transfer capacitance cu,
VGS=0, VDS=25V,f=1MHz - 80 130
Turn-on time ton, (ton = tam + t,) tum - 20 30 ns
' = 30 V, ' =10 V, h, = 2.9 A, t - 45 7O
Rss = 50 f2 r
Turn-off time tom (ts, = tum) + tr) tum) - 70 90
Vcc = 30 V, "ss = 10 V, ID = 2.9 A, t, - 55 70
Rss = 50 C2
Semiconductor Group 2
