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BTA41-700B |BTA41700BSTN/a12000avaiStandard triac, 40Ampere, 700V
BTB41-700B |BTB41700BSTN/a1000avaiSTANDARD TRIACS


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BTA41-700B-BTB41-700B
STANDARD TRIACS
BTA41 A/B
BTB41 B

STANDARD TRIACS
Symbol Parameter Value Unit

IT(RMS) RMS on-state current
(360° conduction angle)
BTA Tc=75 °C40 A
BTB Tc=85 °C45
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)=8.3ms 315 A=10ms 300
I2tI2t value tp=10ms 450 A2s
dI/dt Criticalrateofriseof on-state current
Gate supply:IG= 500mA diG/dt= 1A/μs
Repetitive=50Hz A/μs
Non
Repetitive
Tstg
Storageand operating junction temperature range -40to+15040to+125 Maximum lead temperaturefor soldering during10sat4.5mm
from case
260 °C
TOP3
(Plastic)A2G HIGH SURGE CURRENT CAPABILITY. COMMUTATION: (dV/dt)c> 10V/μs. BTA Family:
INSULATING VOLTAGE= 2500V(RMS)
(UL RECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA41-...A/B/ BTB41-...B Unit
400 600 700 800

VDRM
VRRM
Repetitive peak off-state voltage=125°C
400 600 700 800 V
ABSOLUTE RATINGS
(limiting values)
FEATURES

The BTA41 A/B/ BTB41B triac family are high
performance glass passivated PNPN devices.
These parts are suitablesfor general purpose ap-
plications where high surge current capabilityisre-
quired. Application such as phase control and
static switchingon inductiveor resistive load.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit

Rth (j-a) Junctionto ambient 50 °C/W
Rth(j-c)DC Junctionto caseforDC BTA 1.2 °C/W
BTB 0.8
Rth(j-c)AC Junctionto casefor 360° conduction angleF=50Hz)
BTA 0.9 °C/W
BTB 0.6
Symbol Test Conditions Quadrant Suffix Unit

IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 50 mA MAX 150 100
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt VD=VDRMIG= 500mA
dIG/dt= 3A/μs
Tj=25°C I-II-III-IV TYP 2.5 μs IG=1.2IGT Tj=25°C I-III-IV TYP 70 60 mA 200 180 *IT= 500mA gate open Tj=25°C MAX 100 80 mATM *ITM= 60A tp= 380μs Tj=25°C MAX 1.8 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 6
dV/dt* Linear slopeupto VD=67%VDRM
gate open
Tj=125°C MIN 250 250 V/μs
(dV/dt)c* (dI/dt)c= 18A/ms BTA
(dI/dt)c= 20A/ms BTB
Tj=125°C MIN 10 V/μsFor either polarityof electrodeA2 voltagewith referenceto electrodeA1. (AV) =1W PGM= 40W(tp=20μs) IGM =8A(tp =20μs) VGM=16V(tp=20μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA41 A/B/ BTB41B
ORDERING INFORMATION
Package IT(RMS) VDRM /VRRM Sensitivity Specification A B

BTA
(Insulated) 400 X X
600 X X
700 X X
800 X X
BTB
(Uninsulated) 400 X
600 X
700 X
800 X
Fig.1:
Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curvesarecutoffby (dI/dt)c limitation) (BTA)
Fig.2:
Correlation between maximum RMS power
dissipationand maximum allowable temperatures (Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTA).
Fig.3:
Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curvesarecutoffby (dI/dt)c limitation) (BTB)
Fig.4:
Correlation between maximum RMS power
dissipationand maximum allowable temperatures(Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTB).
BTA41 A/B/ BTB41B
Fig.8: Relative variationof gate trigger current and
holding current versus junction temperature.
Fig.9:
Non Repetitive surge peak on-state current
versus numberof cycles.
Fig.10:
Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t ≤ 10ms, and
corresponding valueofI2t.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7:
Relative variationof thermal transient impedance
pulse duration.
Fig.5:
RMS on-state current versus case temperature.
(BTA)
Fig.6:
RMS on-state current versus case temperature.
(BTB)
BTA41 A/B/ BTB41B
Fig.11: On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA

TOP3 Plastic
Cooling method:C
Marking: type number
Weight:4.7g
Recommended torque value:0.8 m.N.
Maximum torqur value:1 m.N.
R4.6I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
15.10 15.50 0.594 0.611 20.70 21.10 0.814 0.831 14.30 15.60 0.561 0.615 16.10 16.50 0.632 0.650 3.40 - 0.133 - 4.40 4.60 0.173 0.182 4.08 4.17 0.161 0.164 1.45 1.55 0.057 0.062 0.50 0.70 0.019 0.028 2.70 2.90 0.106 0.115 5.40 5.65 0.212 0.223 1.20 1.40 0.047 0.056
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resultfrom itsuse. Nolicense isgranted byimplicationor otherwise underany patent orpatent rights ofSGS-THOMSON Microelectronics.
Specifications mentionedinthis publicationare subjectto change without notice. This publication supersedesand replacesall
information previously supplied.
SGS-THOMSON Microelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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BTA41 A/B/ BTB41B
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